Miscellaneous Devices/10TQ035.mdl

@@ -1,7 +0,0 @@
-*10TQ035 MCE 3/26/98
-*Ref: IR Power Semiconductors Product Digest '94
-*MCE 35V 10A 3us pkg:TO-220 3,1
-.MODEL 10TQ035 D (IS=14.2N RS=4.2M N=1.7 BV=35 IBV=15M
-+ CJO=412P VJ=0.75 M=0.333 TT=4.32U EG=.69 XTI=2)
-
-

Miscellaneous Devices/10TQ040.mdl

@@ -1,7 +0,0 @@
-*10TQ040 MCE 3/26/98
-*Ref: IR Power Semiconductors Product Digest '94
-*MCE 40V 10A 3us pkg:TO-220 3,1
-.MODEL 10TQ040 D (IS=14.2N RS=4.2M N=1.7 BV=40 IBV=15M
-+ CJO=412P VJ=0.75 M=0.333 TT=4.32U EG=.69 XTI=2)
-
-

Miscellaneous Devices/10TQ045.mdl

@@ -1,7 +0,0 @@
-*10TQ045 MCE 3/26/98
-*Ref: IR Power Semiconductors Product Digest '94
-*MCE 45V 10A 3us pkg:TO-220 3,1
-.MODEL 10TQ045 D (IS=14.2N RS=4.2M N=1.7 BV=45 IBV=15M
-+ CJO=412P VJ=0.75 M=0.333 TT=4.32U EG=.69 XTI=2)
-
-

Miscellaneous Devices/11DQ03.mdl

@@ -1,7 +0,0 @@
-*11DQ03 MCE 7-17-95
-*Ref: IR Power Semiconductors Product Digest '94
-*MCE 30V 1.1A pkg:DIODE0.4 1,2
-.MODEL 11DQ03 D(IS=5.18E-9 RS=0.146 N=0.878 TT=4.32E-6 CJO=1.18E-10 
-+ VJ=0.75 M=0.333 EG=0.69 XTI=2 BV=30 IBV=6.01E-6 )
-
-

Miscellaneous Devices/12AU7.ckt

@@ -1,35 +0,0 @@
-*Vacuum Tube Dual Triode (Audio freq.)
-*Connections:
-*              Plate 1
-*              | Grid 1
-*              | | Cathode 1
-*              | | | Plate 2
-*              | | | | Grid 2
-*              | | | | | Cathode 2
-*              | | | | | | H H HM
-*              | | | | | | | | |
-.SUBCKT 12AU7  1 2 3 6 7 8 4 5 9
-X1 1 2 3 12AU7s
-X2 6 7 8 12AU7s
-RH1 4 9 100
-RH2 5 9 100
-.ENDS 12AU7
-
-*Vacuum Tube Triode (Audio freq.)
-*Connections:
-*              Plate
-*              | Grid
-*              | | Cathode
-*              | | |
-.SUBCKT 12AU7s 1 3 4
-B1 2 4 I=((URAMP((V(2,4)/18)+V(3,4)))^1.5)/1151
-C1 3 4 1.6E-12
-C2 3 1 1.5E-12
-C3 1 4 0.5E-12
-R1 3 5 10E+3
-D1 1 2 DX
-D2 4 2 DX2
-D3 5 4 DX
-.MODEL DX D(IS=1.0E-12 RS=1.0)
-.MODEL DX2 D(IS=1.0E-9 RS=1.0)
-.ENDS 12AU7s

Miscellaneous Devices/12AX7.ckt

@@ -1,35 +0,0 @@
-*Vacuum Tube Dual Triode (Audio freq.)
-*Connections:
-*              Plate 1
-*              | Grid 1
-*              | | Cathode 1
-*              | | | Plate 2
-*              | | | | Grid 2
-*              | | | | | Cathode 2
-*              | | | | | | H H HM
-*              | | | | | | | | |
-.SUBCKT 12AX7  1 2 3 6 7 8 4 5 9
-X1 1 2 3 12AX7s
-X2 6 7 8 12AX7s
-RH1 4 9 100
-RH2 5 9 100
-.ENDS 12AX7
-
-*Vacuum Tube Triode (Audio freq.) pkg:VT-9 (A:1,2,3)(B:6,7,8)
-*Connections:
-*              Plate
-*              | Grid
-*              | | Cathode
-*              | | |
-.SUBCKT 12AX7s 1 3 4
-B1 2 4 I=((URAMP((V(2,4)/85)+V(3,4)))^1.5)/580
-C1 3 4 1.6E-12
-C2 3 1 1.7E-12
-C3 1 4 0.46E-12
-R1 3 5 50E+3
-D1 1 2 DX
-D2 4 2 DX2
-D3 5 4 DX
-.MODEL DX D(IS=1.0E-12 RS=1.0)
-.MODEL DX2 D(IS=1.0E-9 RS=1.0)
-.ENDS X12AX7s

Miscellaneous Devices/18TQ045.mdl

@@ -1,20 +0,0 @@
-**************************************
-*      Model Generated by MODPEX     *
-*Copyright(c) Symmetry Design Systems*
-*         All Rights Reserved        *
-*    UNPUBLISHED LICENSED SOFTWARE   *
-*   Contains Proprietary Information *
-*      Which is The Property of      *
-*     SYMMETRY OR ITS LICENSORS      *
-*Commercial Use or Resale Restricted *
-*   by Symmetry License Agreement    *
-**************************************
-* Model generated on Sep 17, 96
-* MODEL FORMAT: SPICE3
-.MODEL 18tq045 d
-+(
-+IS=1.97424e-13 RS=0.00628392 N=0.530234 EG=0.6
-+XTI=0.05 BV=45 IBV=0.0001 CJO=8.24939e-09
-+VJ=1.5 M=0.462568 FC=0.5 TT=0
-+KF=0 AF=1
-+)

Miscellaneous Devices/1N4001.mdl

@@ -1,5 +0,0 @@
-*1N4001 MCE 8-16-95
-*50V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
-.MODEL 1N4001 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
-+ VJ=0.75 M=0.333 BV=50 IBV=1E-5 )
-

Miscellaneous Devices/1N4002.mdl

@@ -1,6 +0,0 @@
-*1N4002 MCE 8-16-95
-*100V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
-.MODEL 1N4002 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
-+ VJ=0.75 M=0.333 BV=100 IBV=1E-5 )
-
-

Miscellaneous Devices/1N4003.mdl

@@ -1,5 +0,0 @@
-*1N4003 MCE 8-16-95
-*200V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
-.MODEL 1N4003 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
-+ VJ=0.75 M=0.333 BV=200 IBV=1.98E-5 )
-

Miscellaneous Devices/1N4004.mdl

@@ -1,6 +0,0 @@
-*1N4004 MCE 8-16-95
-*400V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
-.MODEL 1N4004 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
-+ VJ=0.75 M=0.333 BV=400 IBV=3.95E-5 )
-
-

Miscellaneous Devices/1N4005.mdl

@@ -1,6 +0,0 @@
-*1N4005 MCE 8-16-95
-*600V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
-.MODEL 1N4005 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
-+ VJ=0.75 M=0.333 BV=600 IBV=5.92E-5 )
-
-

Miscellaneous Devices/1N4006.mdl

@@ -1,6 +0,0 @@
-*1N4006 MCE 8-16-95
-*800V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
-.MODEL 1N4006 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
-+ VJ=0.75 M=0.333 BV=800 IBV=7.89E-5 )
-
-

Miscellaneous Devices/1N4007.mdl

@@ -1,5 +0,0 @@
-*1N4007 MCE 8-16-95
-*1000V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
-.MODEL 1N4007 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
-+ VJ=0.75 M=0.333 BV=1000 IBV=9.86E-5 )
-

Miscellaneous Devices/1N4148.mdl

@@ -1,2 +0,0 @@
-.model 1N4148  D(Is=0.1p Rs=16 CJO=2p Tt=12n Bv=100 Ibv=0.1p)
-*          85-??-??   Original library

Miscellaneous Devices/1N4149.mdl

@@ -1,7 +0,0 @@
-*1N4149 MCE 3-13-97
-*Ref: National Discrete Products Databook, 1996
-*75V 10mA Si Computer Diode pkg:DIODE0.4 1,2
-.MODEL 1N4149 D (IS=14.2P RS=4.2 N=1.7 BV=75 IBV=5U
-+ CJO=1.74P VJ=0.75 M=0.333 TT=4.32N)
-
-

Miscellaneous Devices/1N4150.mdl

@@ -1,2 +0,0 @@
-.model 1N4150 D(Is=10E-15 Rs=1.0 CJO=1.3p Tt=12n Bv=70 Ibv=0.1p)
-*          85-??-??   Original library

Miscellaneous Devices/1N4448.mdl

@@ -1,2 +0,0 @@
-.model 1N4448  D(Is=0.1p Rs=2 CJO=2p Tt=12n Bv=100 Ibv=0.1p)
-*          85-??-??   Original library

Miscellaneous Devices/1N4934.mdl

@@ -1,5 +0,0 @@
-*1N4934 MCE
-*400V 1A Si Rectifier pkg:DIODE0.4 1,2
-.MODEL 1N4934 D(IS=2.54E-10 RS=6.874E-6 N=1.498 TT=1.086E-8 CJO=3.135E-11 
-+ VJ=0.5581 M=0.4379 BV=100 IBV=0.0001 )
-

Miscellaneous Devices/1N5400.mdl

@@ -1,6 +0,0 @@
-*1N5400 MCE
-* 50V 3A Si Rectifier pkg:DO-201 1,2
-.MODEL 1N5400 D(IS=2.68E-12 RS=0.00977 N=1.17 TT=1.44E-5 CJO=1.24E-10 
-+ VJ=0.6 M=0.333 BV=66.6 IBV=1E-5 )
-
-

Miscellaneous Devices/1N5401.mdl

@@ -1,5 +0,0 @@
-*1N5401 MCE
-*100V 3A Si Rectifier pkg:DO-201 1,2
-.MODEL 1N5401 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 
-+ VJ=0.6 M=0.333 BV=133.2 IBV=1E-5 )
-

Miscellaneous Devices/1N5402.mdl

@@ -1,6 +0,0 @@
-*1N5402 MCE
-*200V 3A Si Rectifier pkg:DO-201 1,2
-.MODEL 1N5402 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 
-+ VJ=0.6 M=0.333 BV=266 IBV=1E-5 )
-
-

Miscellaneous Devices/1N5404.mdl

@@ -1,6 +0,0 @@
-*1N5404 MCE
-*400V 3A Si Rectifier pkg:DO-201 1,2
-.MODEL 1N5404 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 
-+ VJ=0.6 M=0.333 BV=533 IBV=1E-5 )
-
-

Miscellaneous Devices/1N5406.mdl

@@ -1,6 +0,0 @@
-*1N5406 MCE
-*600V 3A Si Rectifier pkg:DO-201 1,2
-.MODEL 1N5406 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 
-+ VJ=0.6 M=0.333 BV=900 IBV=1E-5 )
-
-

Miscellaneous Devices/1N5407.mdl

@@ -1,7 +0,0 @@
-*1N5407 MCE 8/5/97
-*Ref: International Rectifier Digest '94
-*800V 3000mA 3us Si Diode pkg:DIODE0.4 1,2
-.MODEL 1N5407 D (IS=4.26N RS=14M N=1.7 BV=800 IBV=132U
-+ CJO=125P VJ=0.75 M=0.333 TT=4.32U)
-
-

Miscellaneous Devices/1N5408.mdl

@@ -1,7 +0,0 @@
-*1N5408 MCE 8/5/97
-*Ref: International Rectifier Digest '94
-*1000V 3000mA 3us Si Diode pkg:DIODE0.4 1,2
-.MODEL 1N5408 D (IS=4.26N RS=14M N=1.7 BV=1E+03 IBV=165U
-+ CJO=125P VJ=0.75 M=0.333 TT=4.32U)
-
-

Miscellaneous Devices/1N914.mdl

@@ -1,2 +0,0 @@
-.model 1N914 D(Is=0.1p Rs=16 CJO=2p Tt=12n Bv=100 Ibv=0.1p)
-*          85-??-??   Original library

Miscellaneous Devices/2N3904.mdl

@@ -1,6 +0,0 @@
-*2N3904
-*Si 310mW  40V 200mA 300MHz pkg:TO-92B 1,2,3
-.MODEL 2N3904 NPN(IS=1.4E-14 BF=300 VAF=100 IKF=0.025 ISE=3E-13 
-+ BR=7.5 RC=2.4 CJE=4.5E-12 TF=4E-10 CJC=3.5E-12 TR=2.1E-8 XTB=1.5 KF=9E-16 )
-
-

Miscellaneous Devices/2N3906.mdl

@@ -1,7 +0,0 @@
-*2N3906
-*Si 310mW  40V 200mA 250MHz pkg:TO-92B 1,2,3
-.MODEL 2N3906 PNP(IS=4E-14 BF=400 VAF=50 IKF=0.02 ISE=7E-15 NE=1.16 
-+ BR=7.5 RC=2.4 CJE=6.3E-12 VJE=0.75 TF=5E-10 CJC=5.8E-12 VJC=0.75 TR=2.3E-8 
-+ VJS=0.75 XTB=1.5 KF=6E-16 )
-
-

Miscellaneous Devices/5082_7616.ckt

@@ -1,41 +0,0 @@
-*  
-* Diode Model Produced by Altium Ltd  
-* Date:  7-Apr-2004 
-*  
-* Manufacturer: Agilent  
-* Component Name: 5082-7616  
-*  
-* Parameters derived from information available in data sheet.  
-*
-*                 anode-d
-*                 |  cathode-d
-*                 |  |  cathode-c
-*                 |  |  |  cathode-e
-*                 |  |  |  |  anode-e
-*                 |  |  |  |  |  anode-c
-*                 |  |  |  |  |  |  anode-DP
-*                 |  |  |  |  |  |  |  cathode-DP
-*                 |  |  |  |  |  |  |  |  cathode-b
-*                 |  |  |  |  |  |  |  |  |  cathode-a
-*                 |  |  |  |  |  |  |  |  |  |  anode-a
-*                 |  |  |  |  |  |  |  |  |  |  |  anode-b
-*                 |  |  |  |  |  |  |  |  |  |  |  |  
-.SUBCKT 5082_7616 1  3  4  5  6  7  8  10 11 12 13 14
-
-DA  13 12 d5082_7616
-DB  14 11 d5082_7616
-DC   7  4 d5082_7616
-DD   1  3 d5082_7616
-DE   6  5 d5082_7616
-DDP  8 10 d5082_7616
-
-.MODEL d5082_7616 D
-+ (  
-+     IS = 1.95991353E-12 
-+      N = 2.90687588 
-+     RS = 18.38470387 
-+     BV = 30
-+    IBV = 100u 
-+ )  
-
-.ENDS 5082_7616

Miscellaneous Devices/6L6GC.ckt

@@ -1,23 +0,0 @@
-*Vacuum Tube Tetrode (Audio freq.)
-*Connections:
-*             Plate
-*             | Screen
-*             | | Grid
-*             | | | Cathode
-*             | | | |
-.SUBCKT 6L6GC 1 6 3 4
-B1 2 4 I=(((URAMP((V(7,4)/8)+V(3,4)))^1.5)/1456)*ATAN(V(1,4)/10)
-B2 7 4 I=((URAMP((V(7,4)/8)+V(3,4)))^1.5)/9270
-C1 3 4 10P
-C2 3 1 0.6P
-C3 1 4 6.5P
-R1 3 5 1.5K
-R2 2 4 100K
-D1 1 2 DX
-D2 4 2 DX2
-D3 5 4 DX
-D4 6 7 DX
-D5 4 7 DX2
-.MODEL DX D(IS=1.0P RS=1.0)
-.MODEL DX2 D(IS=1.0N RS=1.0)
-.ENDS 6L6GC

Miscellaneous Devices/6SN7.ckt

@@ -1,34 +0,0 @@
-*Vacuum Tube Dual Triode (Audio freq.)
-*Connections:
-*              Plate 1
-*              | Grid 1
-*              | | Cathode 1
-*              | | | Plate 2
-*              | | | | Grid 2
-*              | | | | | Cathode 2
-*              | | | | | | H H
-*              | | | | | | | |
-.SUBCKT 6SN7   2 1 3 5 4 6 7 8
-X1 2 1 3  6SN7s
-X2 5 4 6 6SN7s
-RH1 7 8 100
-.ENDS 6SN7
-
-*Vacuum Tube Triode (Audio freq.)
-*Connections:
-*            Plate
-*            | Grid
-*            | | Cathode
-*            | | |
-.SUBCKT 6SN7s 1 3 4
-B1 2 4 I=((URAMP((V(2,4)/20)+V(3,4)))^1.5)/1086
-C1 3 4 2.6E-12
-C2 3 1 4.0E-12
-C3 1 4 0.7E-12
-R1 3 5 10E+3
-D1 1 2 DX
-D2 4 2 DX2
-D3 5 4 DX
-.MODEL DX D(IS=1.0E-12 RS=1.0)
-.MODEL DX2 D(IS=1.0E-9 RS=1.0)
-.ENDS 6SN7s

Miscellaneous Devices/7199.ckt

@@ -1,60 +0,0 @@
-*Vacuum Tube Pentode and Triode (Audio freq.)
-*Connections:
-*            Plate 1
-*            | Grid 1
-*            | | Cathode 1
-*            | | | Plate 2
-*            | | | | Grid 2
-*            | | | | | Grid 3
-*            | | | | | | Cathode 2
-*            | | | | | | | Heater
-*            | | | | | | | | Heater
-*            | | | | | | | | |
-.SUBCKT 7199 1 9 8 2 3 7 6 4 5
-X1 1 9 8 7199T
-X2 2 3 7 6 7199P
-RH 4 5 100
-.ENDS 7199
-
-*Vacuum Tube Triode (Audio freq.)
-*Connections:
-*             Plate
-*             | Grid
-*             | | Cathode
-*             | | |
-.SUBCKT 7199T 1 3 4
-B1 2 4 I=((URAMP((V(2,4)/17)+V(3,4)))^1.5)/711
-C1 3 4 2.3E-12
-C2 3 1 2.0E-12
-C3 1 4 0.3E-12
-R1 3 5 5E+3
-D1 1 2 DX
-D2 4 2 DX2
-D3 5 4 DX
-.MODEL DX D(IS=1.0E-12 RS=1.0)
-.MODEL DX2 D(IS=1.0E-9 RS=1.0)
-.ENDS 7199T
-
-*Vacuum Tube Tetrode (Audio freq.)
-*Connections:
-*             Plate
-*             | Screen
-*             | | Grid
-*             | | | Cathode
-*             | | | |
-.SUBCKT 7199P 1 6 3 4
-B1 2 4 I=(((URAMP((V(7,4)/20)+V(3,4)))^1.5)/1206)*ATAN(V(1,4)/10)
-B2 7 4 I=((URAMP((V(7,4)/20)+V(3,4)))^1.5)/2562
-C1 3 4 5.0P
-C2 3 1 0.06P
-C3 1 4 2.0P
-R1 3 5 5K
-R2 2 4 2.5MEG
-D1 1 2 DX
-D2 4 2 DX2
-D3 5 4 DX
-D4 6 7 DX
-D5 4 7 DX2
-.MODEL DX D(IS=1.0P RS=1.0)
-.MODEL DX2 D(IS=1.0N RS=1.0)
-.ENDS 7199P

Miscellaneous Devices/AD645A.ckt

@@ -1,148 +0,0 @@
-* AD645A SPICE Macro-model                  4/92, Rev. B
-*                                           JCB / PMI
-*
-* Revision History:
-*     Rev. B:  Converted model to include noise analysis. 
-*
-* This version of the AD645 model simulates the worst case 
-* parameters of the 'A' grade.  The worst case parameters
-* used correspond to those in the data sheet.
-*
-* Copyright 1990 by Analog Devices, Inc.
-*
-* Refer to "README.DOC" file for License Statement.  Use of this model
-* indicates your acceptance with the terms and provisions in the License Statement.
-*
-* Node assignments
-*                non-inverting input
-*                |   inverting input
-*                |   |   positive supply
-*                |   |   |   negative supply
-*                |   |   |   |   output
-*                |   |   |   |   |
-.SUBCKT AD645A   1   2   99  50  30
-*
-* INPUT STAGE & POLE AT 40 MHZ
-*
-R3   5  50    1.049
-R4   6  50    1.049
-CIN  1   2    1E-12
-C2   5   6    1.90E-9
-I1   99  4    100E-3
-IOS  1   2    0.5E-12
-EOS  65  1    POLY(1)  17 24  500E-6  1
-J1   5   2    4   JX
-J2   6   7    4   JX
-EN   7  65    43  0  1
-GN1  0   1    47  0  1E-6
-GN2  0   2    61  0  1E-6
-GB1  2  50    POLY(3) 4,2 5,2 50,2 0 1E-12 1E-12 1E-12
-GB2  7  50    POLY(3) 4,7 6,7 50,7 0 1E-12 1E-12 1E-12
-*
-EREF 98  0    24  0   1
-*
-* VOLTAGE NOISE GENERATOR
-*
-VN1  41  0    DC 2
-RS1  41 42    11.8E3
-RS2  42 43    1.2E9
-CS1  42 43    79.8E-11
-RS3  43 44    1.2E9
-CS2  43 44    79.8E-11
-RS4  44 45    11.8E3
-VN2  0  45    DC 2
-*
-* CURRENT NOISE GENERATOR
-*
-VN3  46  0    DC 2
-RN5  46 47    144
-RN6  47 48    144
-VN4  0  48    DC 2
-*
-* CURRENT NOISE GENERATOR
-*
-VN5  60  0    DC 2
-RN7  60 61    144
-RN8  61 62    144
-VN6  0  62    DC 2
-*  
-* SECOND STAGE & POLE AT 3 HZ
-*
-R5   9  98    5.26E5
-C3   9  98    1.00E-7
-G1   98  9    5  6  9.53E-1
-V2   99  8    4.7
-V3   10 50    4.7
-D1   9   8    DX
-D2   10  9    DX
-*
-* NEGATIVE ZERO AT 15 MHZ
-*
-R6   11 12     1E6
-C4   11 12     -10.6E-15
-R7   12 98     1
-E2   11 98     9  24  1E6
-*
-* POLE AT 40 MHZ
-*
-R8   13 98     1E3
-C5   13 98     3.98E-12
-G2   98 13     12 24  1E-3
-*
-* POLE AT 40 MHZ
-*
-R9   14 98     1E3
-C6   14 98     3.98E-12
-G3   98 14     13 24  1E-3
-*
-* POLE AT 40 MHZ
-*
-R10  15 98     1E3
-C7   15 98     3.98E-12
-G4   98 15     14 24  1E-3
-*
-* COMMON-MODE GAIN NETWORK WITH ZERO AT 600 HZ
-*
-R11  16 17     1E6
-C8   16 17     2.65E-10
-R12  17 98     1
-E3   16 98     POLY(2) 1  98  2  98  0  15.8  15.8
-*
-* POLE AT 40 MHZ
-*
-R13  18 98     1E3
-C9   18 98     3.98E-12
-G5   98 18     15 24  1E-3
-*
-* OUTPUT STAGE
-*
-R14  24 99     2000E3
-R15  24 50     2000E3
-ISY  99 50     -96.5E-3
-R16  29 99     360
-R17  29 50     360
-L1   29 30     1E-8
-G6   27 50     18 29  2.78E-3
-G7   28 50     29 18  2.78E-3
-G8   29 99     99 18  2.78E-3
-G9   50 29     18 50  2.78E-3
-V4   25 29     2.0
-V5   29 26     2.0
-D3   18 25     DX
-D4   26 18     DX
-D5   99 27     DX
-D6   99 28     DX
-D7   50 27     DY
-D8   50 28     DY
-F1   29  0     V4  1
-F2   0  29     V5  1
-*
-* MODELS USED
-*
-.MODEL JX PJF(BETA=4.54  VTO=-2.000  IS=2.5E-12 RD=0.1
-+ RS=0.1 CGD=1E-15 CGS=1E-15)
-.MODEL DX   D(IS=1E-15 RS=10 CJO=1E-15)
-.MODEL DY   D(IS=1E-15 BV=50 RS=10 CJO=1E-15)
-.MODEL DEN  D(IS=1E-12 RS=7409.6 KF=2.051E-15 AF=1)
-.MODEL DIN  D(IS=1E-12 RS=41.5 KF=0 AF=1)
-.ENDS AD645A

Miscellaneous Devices/ADC8.mdl

@@ -1,4 +0,0 @@
-* 8-Bit generic A/D converter
-* INPUTS  VCC, GND, VIN, VRP, VRM, SC, OE;
-* OUTPUTS VCC_LD, SC_LD, OE_LD, OC, D0, D1, D2, D3, D4, D5, D6, D7;
-.MODEL ADC8 xsimcode(file="{MODEL_PATH}ADC8.scb" func=ADC8 {mntymx})

Miscellaneous Devices/BAS116.mdl

@@ -1,6 +0,0 @@
-*****************************************************************
-.MODEL BAS116 D(
-+       AF= 1.00E+00    BV= 7.50E+01   CJO= 1.83E-12    EG= 1.11E+00
-+       FC= 5.00E-01   IBV= 1.00E-04    IS= 1.48E-13    KF= 0.00E+00
-+        M= 2.62E-01     N= 1.33E+00    RS= 8.48E-01    TT= 8.66E-09
-+       VJ= 3.44E-01   XTI= 3.00E+00) 

Miscellaneous Devices/BAS16.ckt

@@ -1,20 +0,0 @@
-*****************************************************************
-* SPICE2G6 MODEL OF THE DIODE BAS16 (SOT-23)                    *
-* REV: 98.1                  DANALYSE GMBH BERLIN (27.07.1998)  *
-*****************************************************************
-* jjt 30/10/2000: moved the model into the subckt
-*                 
-.SUBCKT BAS16 1 2
-D    3 4 DBAS16
-L1   1 3 0.350N
-L2   4 2 0.350N
-.MODEL DBAS16 D
-+ IS  =  2.7838E-09
-+ N   =  1.8703
-+ RS  =  1.3548
-+ EG  =  1.0637
-+ XTI =  1.5000
-+ CJO =  0.6000E-12
-+ VJ  =  0.2000
-+ M   =  0.1000
-.ENDS

Miscellaneous Devices/BAS21.mdl

@@ -1,6 +0,0 @@
-*****************************************************************
-.MODEL BAS21 D(
-+       AF= 1.00E+00    BV= 2.50E+02   CJO= 6.64E-13    EG= 1.11E+00
-+       FC= 5.00E-01   IBV= 1.00E-04    IS= 6.42E-09    KF= 0.00E+00
-+        M= 1.00E-01     N= 1.98E+00    RS= 9.12E-01    TT= 7.21E-08
-+       VJ= 2.00E+00   XTI= 3.00E+00)

Miscellaneous Devices/BAS70.mdl

@@ -1,6 +0,0 @@
-*****************************************************************
-.MODEL BAS70 D(IS=3N N=1.06 RS=29 XTI=1.8 EG=.68 
-+ CJO=1.55P M=.29 VJ=.36 FC=.5 BV=70 IBV=100n TT=25P)
-* ISR=2.5n NR=1k IKF=5m
-* for 27C reverse current simulation use: GMIN=.5e-9
-* 17.12.1993 SIEMENS PD1 KURTH

Miscellaneous Devices/BAT17.mdl

@@ -1,5 +0,0 @@
-*****************************************************************
-* BAT17x Series Diode Model
-.MODEL D188 D(IS=4n RS=3.3 N=1.03 XTI=2 EG=.65
-+ CJO=415f M=.156 VJ=.115 FC=.5 BV=12 IBV=5U TT=25p)
-* 07.09.95 SIEMENS PD1 KURTH

Miscellaneous Devices/BAT18.mdl

@@ -1,5 +0,0 @@
-*****************************************************************
-* BAT18 Diode Model
-.MODEL BAT18 D(IS=185F RS=.30 N=1.305 BV=70 IBV=.1N
-+ CJO=1.17P VJ=.12 M=.096 TT=125N)
-* SIEMENS 40 Volt 125ns  Si-PIN-Switch  17-03-1996 Moschovis

Miscellaneous Devices/BBY31.mdl

@@ -1,24 +0,0 @@
-*   ZETEX  BBY31  Spice Model        Last revision 18/8/92
-*
-.MODEL BBY31 D IS=10.01E-15 N=1.095 RS=.2082 XTI=3 
-+      EG=1.11 CJO=27.36E-12 M=1.001 VJ=2.099 FC=.5 BV=45.12 
-+      IBV=92.44E-3 TT=145.7E-9
-*
-*    + ISR=7.447E-12 NR=2.334 IKF=10.15 (LATER SPICE VERSIONS ONLY)
-*
-*NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE OF 2.5E-9H AND SET
-*  RS=0.60 FOR 2V, 0.53 FOR 5V, 0.45 FOR 10V OR 0.39 FOR 20V BIAS.
-*
-*                          (C)  1992 ZETEX PLC
-*
-*   The copyright in this model  and  the design embodied belong to
-*   Zetex PLC ("Zetex"). It is supplied free of charge by Zetex for
-*   the purpose  of research  and design  and may be used or copied
-*   intact (including this notice) for that purpose only. All other
-*   rights  are  reserved.  The model  is believed  accurate but no
-*   condition or warranty as to its  merchantability or fitness for
-*   purpose  is  given  and  no liability  in respect of any use is
-*   accepted by Zetex PLC, its distributors or agents.
-*
-*
-*   Zetex PLC, Fields New Road, Chadderton, Oldham  OL9 8NP

Miscellaneous Devices/BBY40.mdl

@@ -1,24 +0,0 @@
-*   ZETEX  BBY40  Spice Model        Last revision 18/8/92
-*
-.MODEL BBY40 D IS=7.417E-15 N=1.058 RS=.1259 XTI=3 
-+      EG=1.11 CJO=64.39E-12 M=1.013 VJ=2.566 FC=.5 BV=45.12 
-+      IBV=.1232 TT=215E-9
-*
-*    + ISR=1.731E-12 NR=2.27 IKF 9.882 (LATER SPICE VERSIONS ONLY)
-*
-*NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE OF 2.5E-9H AND SET
-*  RS=0.47 FOR 2V, 0.39 FOR 5V, 0.32 FOR 10V OR 0.28 FOR 20V BIAS.
-*
-*                          (C)  1992 ZETEX PLC
-*
-*   The copyright in this model  and  the design embodied belong to
-*   Zetex PLC ("Zetex"). It is supplied free of charge by Zetex for
-*   the purpose  of research  and design  and may be used or copied
-*   intact (including this notice) for that purpose only. All other
-*   rights  are  reserved.  The model  is believed  accurate but no
-*   condition or warranty as to its  merchantability or fitness for
-*   purpose  is  given  and  no liability  in respect of any use is
-*   accepted by Zetex PLC, its distributors or agents.
-*
-*
-*   Zetex PLC, Fields New Road, Chadderton, Oldham  OL9 8NP

Miscellaneous Devices/Bridge.ckt

@@ -1,14 +0,0 @@
-*Default Diode Bridge Rectifier
-*Connections:
-*              V- 
-*              | AC1
-*              | | V+
-*              | | | AC2
-*              | | | |
-.SUBCKT BRIDGE 1 2 3 4
-D1 1 2 DMOD
-D2 1 4 DMOD
-D3 2 3 DMOD
-D4 4 3 DMOD
-.MODEL DMOD D ()
-.ENDS BRIDGE

Miscellaneous Devices/CAP.mdl

@@ -1,2 +0,0 @@
-*Default semiconductor capacitor
-.MODEL CAP C()

Miscellaneous Devices/DAC8.mdl

@@ -1,4 +0,0 @@
-* 8-Bit generic D/A converter
-* INPUTS VCC, GND, D7, D6, D5, D4, D3, D2, D1, D0, VRM, VRP;
-* OUTPUTS VCC_LD, D7_LD, D6_LD, D5_LD, D4_LD, D3_LD, D2_LD, D1_LD, D0_LD, VOUT;
-.MODEL DAC8 xsimcode(file="{MODEL_PATH}DAC8.scb" func=DAC8 {mntymx})

Miscellaneous Devices/DIODE.mdl

@@ -1,3 +0,0 @@
-*Default Diode
-*Diode Pinout: A,K
-.MODEL DIODE D()

Miscellaneous Devices/DIPSW2.ckt

@@ -1,19 +0,0 @@
-* DIP switch 2
-* jjt 19/6/2002: created
-*
-*             Switch connections:
-*             sw1
-*             |  |  sw2
-*             |  |  |  |
-*             |  |  |  |
-.subckt dpsw2 1  2  4  5
-+ PARAMS: STATE1=0 STATE2=0 RON=1m ROFF=100E6
-*
-V1 3 0 {STATE1}
-V2 6 0 {STATE2}
-*
-SDIP1 1 2 3 0 DIPMOD
-SDIP2 4 5 6 0 DIPMOD
-*
-.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
-.ends dpsw2

Miscellaneous Devices/DIPSW3.ckt

@@ -1,22 +0,0 @@
-* DIP switch 3
-* jjt 20/6/2002: created
-*
-*             Switch connections:
-*             sw1
-*             |  |  sw2
-*             |  |  |  |  sw3
-*             |  |  |  |  |  |
-*             |  |  |  |  |  |
-.subckt dpsw3 1  2  4  5  7  8 
-+ PARAMS: STATE1=0 STATE2=0 STATE3=0 RON=1m ROFF=100E6
-*
-V1 3 0 {STATE1}
-V2 6 0 {STATE2}
-V3 9 0 {STATE3}
-*
-SDIP1 1 2 3 0 DIPMOD
-SDIP2 4 5 6 0 DIPMOD
-SDIP3 7 8 9 0 DIPMOD
-*
-.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
-.ends dpsw3

Miscellaneous Devices/DIPSW4.ckt

@@ -1,25 +0,0 @@
-* DIP switch 4
-* jjt 20/6/2002: created
-*
-*             Switch connections:
-*             sw1
-*             |  |  sw2
-*             |  |  |  |  sw3
-*             |  |  |  |  |  |   sw4
-*             |  |  |  |  |  |  |   |
-*             |  |  |  |  |  |  |   |
-.subckt dpsw4 1  2  4  5  7  8  10  11
-+ PARAMS: STATE1=0 STATE2=0 STATE3=0 STATE4=0 RON=1m ROFF=100E6
-*
-V1 3  0 {STATE1}
-V2 6  0 {STATE2}
-V3 9  0 {STATE3}
-V4 12 0 {STATE4}
-*
-SDIP1 1  2  3  0 DIPMOD
-SDIP2 4  5  6  0 DIPMOD
-SDIP3 7  8  9  0 DIPMOD
-SDIP4 10 11 12 0 DIPMOD
-*
-.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
-.ends dpsw4

Miscellaneous Devices/DIPSW5.ckt

@@ -1,28 +0,0 @@
-* DIP switch 5
-* jjt 20/6/2002: created
-*
-*             Switch connections:
-*             sw1
-*             |  |  sw2
-*             |  |  |  |  sw3
-*             |  |  |  |  |  |   sw4
-*             |  |  |  |  |  |  |   |    sw5
-*             |  |  |  |  |  |  |   |   |   |
-*             |  |  |  |  |  |  |   |   |   |
-.subckt dpsw5 1  2  4  5  7  8  10  11  13  14
-+ PARAMS: STATE1=0 STATE2=0 STATE3=0 STATE4=0 STATE5=0 RON=1m ROFF=100E6
-*
-V1 3  0 {STATE1}
-V2 6  0 {STATE2}
-V3 9  0 {STATE3}
-V4 12 0 {STATE4}
-V5 15 0 {STATE5}
-*
-SDIP1 1  2  3  0 DIPMOD
-SDIP2 4  5  6  0 DIPMOD
-SDIP3 7  8  9  0 DIPMOD
-SDIP4 10 11 12 0 DIPMOD
-SDIP5 13 14 15 0 DIPMOD
-*
-.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
-.ends dpsw5

Miscellaneous Devices/DIPSW6.ckt

@@ -1,31 +0,0 @@
-* DIP switch 6
-* jjt 20/6/2002: created
-*
-*             Switch connections:
-*             sw1
-*             |  |  sw2
-*             |  |  |  |  sw3
-*             |  |  |  |  |  |   sw4
-*             |  |  |  |  |  |  |   |    sw5
-*             |  |  |  |  |  |  |   |   |   |    sw6
-*             |  |  |  |  |  |  |   |   |   |   |   |
-*             |  |  |  |  |  |  |   |   |   |   |   |
-.subckt dpsw6 1  2  4  5  7  8  10  11  13  14  16  17
-+ PARAMS: STATE1=0 STATE2=0 STATE3=0 STATE4=0 STATE5=0 STATE6=0 RON=1m ROFF=100E6
-*
-V1 3  0 {STATE1}
-V2 6  0 {STATE2}
-V3 9  0 {STATE3}
-V4 12 0 {STATE4}
-V5 15 0 {STATE5}
-V6 18 0 {STATE6}
-*
-SDIP1 1  2  3  0 DIPMOD
-SDIP2 4  5  6  0 DIPMOD
-SDIP3 7  8  9  0 DIPMOD
-SDIP4 10 11 12 0 DIPMOD
-SDIP5 13 14 15 0 DIPMOD
-SDIP6 16 17 18 0 DIPMOD
-*
-.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
-.ends dpsw6

Miscellaneous Devices/DIPSW7.ckt

@@ -1,34 +0,0 @@
-* DIP switch 7
-* jjt 20/6/2002: created
-*
-*             Switch connections:
-*             sw1
-*             |  |  sw2
-*             |  |  |  |  sw3
-*             |  |  |  |  |  |   sw4
-*             |  |  |  |  |  |  |   |    sw5
-*             |  |  |  |  |  |  |   |   |   |    sw6
-*             |  |  |  |  |  |  |   |   |   |   |   |    sw7
-*             |  |  |  |  |  |  |   |   |   |   |   |   |   |
-*             |  |  |  |  |  |  |   |   |   |   |   |   |   |
-.subckt dpsw7 1  2  4  5  7  8  10  11  13  14  16  17  19  20
-+ PARAMS: STATE1=0 STATE2=0 STATE3=0 STATE4=0 STATE5=0 STATE6=0 STATE7=0 RON=1m ROFF=100E6
-*
-V1 3  0 {STATE1}
-V2 6  0 {STATE2}
-V3 9  0 {STATE3}
-V4 12 0 {STATE4}
-V5 15 0 {STATE5}
-V6 18 0 {STATE6}
-V7 21 0 {STATE7}
-*
-SDIP1 1  2  3  0 DIPMOD
-SDIP2 4  5  6  0 DIPMOD
-SDIP3 7  8  9  0 DIPMOD
-SDIP4 10 11 12 0 DIPMOD
-SDIP5 13 14 15 0 DIPMOD
-SDIP6 16 17 18 0 DIPMOD
-SDIP7 19 20 21 0 DIPMOD
-*
-.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
-.ends dpsw7

Miscellaneous Devices/DIPSW8.ckt

@@ -1,37 +0,0 @@
-* DIP switch 8
-* jjt 20/6/2002: created
-*
-*             Switch connections:
-*             sw1
-*             |  |  sw2
-*             |  |  |  |  sw3
-*             |  |  |  |  |  |   sw4
-*             |  |  |  |  |  |  |   |    sw5
-*             |  |  |  |  |  |  |   |   |   |    sw6
-*             |  |  |  |  |  |  |   |   |   |   |   |    sw7
-*             |  |  |  |  |  |  |   |   |   |   |   |   |   |    sw8
-*             |  |  |  |  |  |  |   |   |   |   |   |   |   |   |   |
-*             |  |  |  |  |  |  |   |   |   |   |   |   |   |   |   |
-.subckt dpsw8 1  2  4  5  7  8  10  11  13  14  16  17  19  20  22  23
-+ PARAMS: STATE1=0 STATE2=0 STATE3=0 STATE4=0 STATE5=0 STATE6=0 STATE7=0 STATE8=0 RON=1m ROFF=100E6
-*
-V1 3  0 {STATE1}
-V2 6  0 {STATE2}
-V3 9  0 {STATE3}
-V4 12 0 {STATE4}
-V5 15 0 {STATE5}
-V6 18 0 {STATE6}
-V7 21 0 {STATE7}
-V8 24 0 {STATE8}
-*
-SDIP1 1  2  3  0 DIPMOD
-SDIP2 4  5  6  0 DIPMOD
-SDIP3 7  8  9  0 DIPMOD
-SDIP4 10 11 12 0 DIPMOD
-SDIP5 13 14 15 0 DIPMOD
-SDIP6 16 17 18 0 DIPMOD
-SDIP7 19 20 21 0 DIPMOD
-SDIP8 22 23 24 0 DIPMOD
-*
-.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
-.ends dpsw8

Miscellaneous Devices/DIPSW9.ckt

@@ -1,40 +0,0 @@
-* DIP switch 9
-* jjt 20/6/2002: created
-*
-*             Switch connections:
-*             sw1
-*             |  |  sw2
-*             |  |  |  |  sw3
-*             |  |  |  |  |  |   sw4
-*             |  |  |  |  |  |  |   |    sw5
-*             |  |  |  |  |  |  |   |   |   |    sw6
-*             |  |  |  |  |  |  |   |   |   |   |   |    sw7
-*             |  |  |  |  |  |  |   |   |   |   |   |   |   |    sw8
-*             |  |  |  |  |  |  |   |   |   |   |   |   |   |   |   |    sw9
-*             |  |  |  |  |  |  |   |   |   |   |   |   |   |   |   |   |   |
-*             |  |  |  |  |  |  |   |   |   |   |   |   |   |   |   |   |   |
-.subckt dpsw9 1  2  4  5  7  8  10  11  13  14  16  17  19  20  22  23  25  26
-+PARAMS: STATE1=0 STATE2=0 STATE3=0 STATE4=0 STATE5=0 STATE6=0 STATE7=0 STATE8=0 STATE9=0 RON=1m ROFF=100E6
-*
-V1 3  0 {STATE1}
-V2 6  0 {STATE2}
-V3 9  0 {STATE3}
-V4 12 0 {STATE4}
-V5 15 0 {STATE5}
-V6 18 0 {STATE6}
-V7 21 0 {STATE7}
-V8 24 0 {STATE8}
-V9 27 0 {STATE9}
-*
-SDIP1 1  2  3  0 DIPMOD
-SDIP2 4  5  6  0 DIPMOD
-SDIP3 7  8  9  0 DIPMOD
-SDIP4 10 11 12 0 DIPMOD
-SDIP5 13 14 15 0 DIPMOD
-SDIP6 16 17 18 0 DIPMOD
-SDIP7 19 20 21 0 DIPMOD
-SDIP8 22 23 24 0 DIPMOD
-SDIP9 25 26 27 0 DIPMOD
-*
-.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
-.ends dpsw9

Miscellaneous Devices/DPDTRELAY.ckt

@@ -1,38 +0,0 @@
-*DPDT Relay Subcircuit Parameters
-*PULLIN     = Pull in voltage
-*DROPOFF    = Drop off voltage
-*CONTACT    = Contact resistance
-*RESISTANCE = Coil resistance
-*INDUCTANCE = Coil Inductance 
-* jjt 15/6/2002: extended existing SPDT model to DPDT.
-*
-*Generic DPDT Relay
-*Connections:     COM1
-*                 | NC1
-*                 | | NO1
-*                 | | | T1
-*                 | | | | T2
-*                 | | | | | COM2
-*                 | | | | | |  NC2
-*                 | | | | | |  |  NO2
-*                 | | | | | |  |  |
-*                 | | | | | |  |  |
-.SUBCKT DPDTRELAY 1 2 3 4 5 11 12 13
-+ PARAMS: PULLIN=4 DROPOFF=0.1 CONTACT=1m RESISTANCE=500 INDUCTANCE=10m
-L1 4 6 {(INDUCTANCE/2)}
-L2 5 7 {(INDUCTANCE/2)}
-R1 6 7 {RESISTANCE}
-*
-BNO1 8 0 V={PULLIN}-abs(v(6,7))
-SW1 2 1 8 0 SWNC ON
-BNC1 9 0 V=abs(v(6,7))
-SW2 3 1 9 0 SWNO OFF
-*
-BNO2 15 0 V={PULLIN}-abs(v(6,7))
-SW3 12 11 15 0 SWNC ON
-BNC2 16 0 V=abs(v(6,7))
-SW4 13 11 16 0 SWNO OFF
-*
-.MODEL SWNC SW(VT={DROPOFF} RON={CONTACT} )
-.MODEL SWNO SW(VT={(PULLIN*0.98)} RON={CONTACT} )
-.ENDS DPDTRELAY

Miscellaneous Devices/DPSTRELAY.ckt

@@ -1,33 +0,0 @@
-*DPST Relay Subcircuit Parameters
-*PULLIN     = Pull in voltage
-*DROPOFF    = Drop off voltage
-*CONTACT    = Contact resistance
-*RESISTANCE = Coil resistance
-*INDUCTANCE = Coil Inductance 
-* jjt 15/6/2002: changed DPDT model to DPST.
-*
-*Generic DPST Relay
-*Connections:     NO_A1
-*                 | NO_A2
-*                 | | NO_B1
-*                 | | | NO_B2
-*                 | | | |  T1
-*                 | | | |  | T2
-*                 | | | |  | |
-*                 | | | |  | |
-*                 | | | |  | |
-*                 | | | |  | |
-.SUBCKT DPSTRELAY 1 2 3 10 4 5
-+ PARAMS: PULLIN=4 DROPOFF=0.1 CONTACT=1m RESISTANCE=500 INDUCTANCE=10m
-L1 4 6 {(INDUCTANCE/2)}
-L2 5 7 {(INDUCTANCE/2)}
-R1 6 7 {RESISTANCE}
-*
-BNO1 8 0 V={PULLIN}-abs(v(6,7))
-SW1 1 2 8 0 SWNO OFF
-*
-BNO2 9 0 V={PULLIN}-abs(v(6,7))
-SW2 3 10 9 0 SWNO OFF
-*
-.MODEL SWNO SW(VT={(PULLIN*0.98)} RON={CONTACT} )
-.ENDS DPSTRELAY

Miscellaneous Devices/DTUNNEL1.ckt

@@ -1,16 +0,0 @@
-*Tunnel Diode Default
-*MCE 600V 50A 27.2ns default parameters
-*Diode Pinout: A,K
-* Parameters:
-* RS:  Series resistance value
-* RP:  Negative resistance value in parallel with capacitance. 
-* CP:   Capacitance value in parallel with negative resistance.
-* LS:  Series inductance value.
-*
-*
-.SUBCKT DTUNNEL1 1 2 PARAMS: Rs=6 Rp=-75 Cp=0.6E-12 Ls=0.1nH
-RS  1 3  {Rs}
-RP  3 4  {Rp}
-CP  3 4  {Cp}
-LS  4 2  {Ls}
-.ENDS DTUNNEL1

Miscellaneous Devices/DTUNNEL2.ckt

@@ -1,9 +0,0 @@
-* Generic tunnel diode. Written 30/11/2001.
-*
-.SUBCKT DTUNNEL2 1 2 PARAMS: Vp=60mV Ip=5mA Vv=0.3V Iv=0.3mA Vpp=500mV Vt=26mV
-
-BTHE  1 2 I = {Ip}*exp(-{Vpp}/{Vt})*(exp(v(1,2)/{vt})-1)
-BTUN  1 2 I = {Ip}*(v(1,2)/{Vp})*exp(1-v(1,2)/{Vp})
-BEXC  1 2 I = {Iv}*exp(v(1,2)-{Vv})
-
-.ENDS DTUNNEL2

Miscellaneous Devices/FUSE.ckt

@@ -1,9 +0,0 @@
-*FUSE:Fuse Subcircuit Parameters
-*CURRENT    = Fuse current
-*RESISTANCE = Internal resistance
-
-.SUBCKT FUSE 1 2 PARAMS: CURRENT=1 RESISTANCE=1m
-SW1 1 2 3 0 SMOD OFF
-BNLV 3 0 V=(abs(v(1,2)))
-.MODEL SMOD SW (VT={(CURRENT*RESISTANCE)} RON=1g ROFF={RESISTANCE})
-.ENDS FUSE

Miscellaneous Devices/HDSP_501B.ckt

@@ -1,50 +0,0 @@
-*  
-* Diode Model Produced by Altium Ltd  
-* Date:  4-May-2004 
-*  
-* Manufacturer: Renesas  
-* Component Name: HDSP-501B  
-*  
-* Parameters derived from information available in data sheet.  
-*
-*                 cathode-e
-*                 |  cathode-d
-*                 |  |  common-anode
-*                 |  |  |  cathode-c
-*                 |  |  |  |  cathode-DP
-*                 |  |  |  |  |  cathode-b
-*                 |  |  |  |  |  |  cathode-a
-*                 |  |  |  |  |  |  |  common-anode
-*                 |  |  |  |  |  |  |  |  cathode-f
-*                 |  |  |  |  |  |  |  |  |  cathode-g
-*                 |  |  |  |  |  |  |  |  |  |  
-.SUBCKT HDSP_501B 1  2  3  4  5  6  7  8  9  10
-
-DA1  3  7  dHDSP_501B
-DB1  3  6  dHDSP_501B
-DC1  3  4  dHDSP_501B
-DD1  3  2  dHDSP_501B
-DE1  3  1  dHDSP_501B
-DF1  3  9  dHDSP_501B
-DG1  3 10  dHDSP_501B
-DDP1 3  5  dHDSP_501B
-
-DA2  8  7  dHDSP_501B
-DB2  8  6  dHDSP_501B
-DC2  8  4  dHDSP_501B
-DD2  8  2  dHDSP_501B
-DE2  8  1  dHDSP_501B
-DF2  8  9  dHDSP_501B
-DG2  8 10  dHDSP_501B
-DDP2 8  5  dHDSP_501B
-
-.MODEL dHDSP_501B D
-+ (  
-+    IS = 2.15137703E-17 
-+    N  = 4.02940472 
-+    RS = 16.32357710 
-+    BV = 4.50000000 
-+    IBV = 100u 
-+ )  
-
-.ENDS HDSP_501B

Miscellaneous Devices/HDSP_503B.ckt

@@ -1,50 +0,0 @@
-*  
-* Diode Model Produced by Altium Ltd  
-* Date:  4-May-2004 
-*  
-* Manufacturer: Renesas  
-* Component Name: HDSP-503B  
-*  
-* Parameters derived from information available in data sheet.  
-*
-*                 anode-e
-*                 |  anode-d
-*                 |  |  common-cathode
-*                 |  |  |  anode-c
-*                 |  |  |  |  anode-DP
-*                 |  |  |  |  |  anode-b
-*                 |  |  |  |  |  |  anode-a
-*                 |  |  |  |  |  |  |  common-cathode
-*                 |  |  |  |  |  |  |  |  anode-f
-*                 |  |  |  |  |  |  |  |  |  anode-g
-*                 |  |  |  |  |  |  |  |  |  |  
-.SUBCKT HDSP_503B 1  2  3  4  5  6  7  8  9  10
-
-DA1   7  3  dHDSP_503B
-DB1   6  3  dHDSP_503B
-DC1   4  3  dHDSP_503B
-DD1   2  3  dHDSP_503B
-DE1   1  3  dHDSP_503B
-DF1   9  3  dHDSP_503B
-DG1  10  3  dHDSP_503B
-DDP1  5  3  dHDSP_503B
-
-DA2   7  8  dHDSP_503B
-DB2   6  8  dHDSP_503B
-DC2   4  8  dHDSP_503B
-DD2   2  8  dHDSP_503B
-DE2   1  8  dHDSP_503B
-DF2   9  8  dHDSP_503B
-DG2  10  8  dHDSP_503B
-DDP2  5  8  dHDSP_503B
-
-.MODEL dHDSP_503B D
-+ (  
-+    IS = 2.15137703E-17 
-+    N  = 4.02940472 
-+    RS = 16.32357710 
-+    BV = 4.50000000 
-+    IBV = 100u 
-+ )  
-
-.ENDS HDSP_503B

Miscellaneous Devices/HDSP_7401.ckt

@@ -1,50 +0,0 @@
-*  
-* Diode Model Produced by Altium Ltd  
-* Date:  3-May-2004 
-*  
-* Manufacturer: Renesas  
-* Component Name: HDSP-7401  
-*  
-* Parameters derived from information available in data sheet.  
-* 
-*                 common-anode
-*                 |  cathode-f
-*                 |  |  cathode-g
-*                 |  |  |  cathode-e
-*                 |  |  |  |  cathode-d
-*                 |  |  |  |  |  common-anode
-*                 |  |  |  |  |  |  cathode-DP
-*                 |  |  |  |  |  |  |  cathode-c
-*                 |  |  |  |  |  |  |  |  cathode-b
-*                 |  |  |  |  |  |  |  |  |  cathode-a
-*                 |  |  |  |  |  |  |  |  |  |
-.SUBCKT HDSP_7401 1  2  3  4  5  6  7  8  9  10
-
-DA1  1  10  dHDSP_7401
-DB1  1   9  dHDSP_7401
-DC1  1   8  dHDSP_7401
-DD1  1   5  dHDSP_7401
-DE1  1   4  dHDSP_7401
-DF1  1   2  dHDSP_7401
-DG1  1   3  dHDSP_7401
-DDP1 1   7  dHDSP_7401
-
-DA2  6  10  dHDSP_7401
-DB2  6   9  dHDSP_7401
-DC2  6   8  dHDSP_7401
-DD2  6   5  dHDSP_7401
-DE2  6   4  dHDSP_7401
-DF2  6   2  dHDSP_7401
-DG2  6   3  dHDSP_7401
-DDP2 6   7  dHDSP_7401
-
-.MODEL dHDSP_7401 D
-+ (  
-+    IS = 2.77296438E-23 
-+    N  = 1.39205436 
-+    RS = 25.13253104 
-+    BV = 45.00000000 
-+    IBV = 100u 
-+ )  
-
-.ENDS HDSP_7401

Miscellaneous Devices/HDSP_7403.ckt

@@ -1,50 +0,0 @@
-*  
-* Diode Model Produced by Altium Ltd  
-* Date:  3-May-2004 
-*  
-* Manufacturer: Renesas  
-* Component Name: HDSP-7403  
-*  
-* Parameters derived from information available in data sheet.  
-* 
-*                 common-cathode
-*                 |  anode-f
-*                 |  |  anode-g
-*                 |  |  |  anode-e
-*                 |  |  |  |  anode-d
-*                 |  |  |  |  |  common-cathode
-*                 |  |  |  |  |  |  anode-DP
-*                 |  |  |  |  |  |  |  anode-c
-*                 |  |  |  |  |  |  |  |  anode-b
-*                 |  |  |  |  |  |  |  |  |  anode-a
-*                 |  |  |  |  |  |  |  |  |  |
-.SUBCKT HDSP_7403 1  2  3  4  5  6  7  8  9  10
-
-DA1  10  1  dHDSP_7403
-DB1   9  1  dHDSP_7403
-DC1   8  1  dHDSP_7403
-DD1   5  1  dHDSP_7403
-DE1   4  1  dHDSP_7403
-DF1   2  1  dHDSP_7403
-DG1   3  1  dHDSP_7403
-DDP1  7  1  dHDSP_7403
-
-DA2  10  6  dHDSP_7403
-DB2   9  6  dHDSP_7403
-DC2   8  6  dHDSP_7403
-DD2   5  6  dHDSP_7403
-DE2   4  6  dHDSP_7403
-DF2   2  6  dHDSP_7403
-DG2   3  6  dHDSP_7403
-DDP2  7  6  dHDSP_7403
-
-.MODEL dHDSP_7403 D
-+ (  
-+    IS = 2.77296438E-23 
-+    N  = 1.39205436 
-+    RS = 25.13253104 
-+    BV = 45.00000000 
-+    IBV = 100u 
-+ )  
-
-.ENDS HDSP_7403

Miscellaneous Devices/HDSP_A211.ckt

@@ -1,50 +0,0 @@
-*  
-* Diode Model Produced by Altium Ltd  
-* Date:  10-Mar-2004 
-*  
-* Manufacturer: Agilent  
-* Component Name: HDSP-A211  
-*  
-* Parameters derived from information available in data sheet.  
-*
-*                 common-anode
-*                 |  cathode-f
-*                 |  |  cathode-g
-*                 |  |  |  cathode-e
-*                 |  |  |  |  cathode-d
-*                 |  |  |  |  |  common-anode
-*                 |  |  |  |  |  |  cathode-DP
-*                 |  |  |  |  |  |  |  cathode-c
-*                 |  |  |  |  |  |  |  |  cathode-b
-*                 |  |  |  |  |  |  |  |  |  cathode-a
-*                 |  |  |  |  |  |  |  |  |  |
-.SUBCKT HDSP_A211 1  2  3  4  5  6  7  8  9  10
-
-DA1  1  10 dHDSP_A211
-DB1  1   9 dHDSP_A211
-DC1  1   8 dHDSP_A211
-DD1  1   5 dHDSP_A211
-DE1  1   4 dHDSP_A211
-DF1  1   2 dHDSP_A211
-DG1  1   3 dHDSP_A211
-DDP1 1   7 dHDSP_A211
-
-DA2  6  10 dHDSP_A211
-DB2  6   9 dHDSP_A211
-DC2  6   8 dHDSP_A211
-DD2  6   5 dHDSP_A211
-DE2  6   4 dHDSP_A211
-DF2  6   2 dHDSP_A211
-DG2  6   3 dHDSP_A211
-DDP2 6   7 dHDSP_A211
-
-.MODEL dHDSP_A211 D
-+ (  
-+     IS = 2.92097419E-52 
-+      N = 0.52799867 
-+     RS = 25.27044243 
-+     BV = 30
-+    IBV = 100u 
-+ )  
-
-.ENDS HDSP_A211

Miscellaneous Devices/HDSP_A213.ckt

@@ -1,50 +0,0 @@
-*  
-* Diode Model Produced by Altium Ltd  
-* Date:  10-Mar-2004 
-*  
-* Manufacturer: Agilent  
-* Component Name: HDSP-A213  
-*  
-* Parameters derived from information available in data sheet.  
-*
-*                 common-anode
-*                 |  kathode-f
-*                 |  |  kathode-g
-*                 |  |  |  kathode-e
-*                 |  |  |  |  kathode-d
-*                 |  |  |  |  |  common-anode
-*                 |  |  |  |  |  |  kathode-DP
-*                 |  |  |  |  |  |  |  kathode-c
-*                 |  |  |  |  |  |  |  |  kathode-b
-*                 |  |  |  |  |  |  |  |  |  kathode-a
-*                 |  |  |  |  |  |  |  |  |  |
-.SUBCKT HDSP_A213 1  2  3  4  5  6  7  8  9  10
-
-DA1  10  1 dHDSP_A213
-DB1   9  1 dHDSP_A213
-DC1   8  1 dHDSP_A213
-DD1   5  1 dHDSP_A213
-DE1   4  1 dHDSP_A213
-DF1   2  1 dHDSP_A213
-DG1   3  1 dHDSP_A213
-DDP1  7  1 dHDSP_A213
-
-DA2  10  6 dHDSP_A213
-DB2   9  6 dHDSP_A213
-DC2   8  6 dHDSP_A213
-DD2   5  6 dHDSP_A213
-DE2   4  6 dHDSP_A213
-DF2   2  6 dHDSP_A213
-DG2   3  6 dHDSP_A213
-DDP2  7  6 dHDSP_A213
-
-.MODEL dHDSP_A213 D
-+ (  
-+     IS = 2.92097419E-52 
-+      N = 0.52799867 
-+     RS = 25.27044243 
-+     BV = 30
-+    IBV = 100u 
-+ )  
-
-.ENDS HDSP_A213

Miscellaneous Devices/HDSP_A27C.ckt

@@ -1,71 +0,0 @@
-*  
-* Diode Model Produced by Altium Ltd  
-* Date:  11-Mar-2004 
-*  
-* Manufacturer: Agilent  
-* Component Name: HDSP-A27C  
-*  
-* Parameters derived from information available in data sheet.  
-* 
-*                 1E/2E anode  
-*                 |  1M/2M anode  
-*                 |  |  1L/2L anode
-*                 |  |  |  1K/2K anode
-*                 |  |  |  |  1J/2J anode
-*                 |  |  |  |  |  1D/2D anode
-*                 |  |  |  |  |  |  DP1 anode
-*                 |  |  |  |  |  |  |  1C/2C anode
-*                 |  |  |  |  |  |  |  |  1B/2B anode
-*                 |  |  |  |  |  |  |  |  |  DIGIT No. 2 Common cathode
-*                 |  |  |  |  |  |  |  |  |  |  1A/2A anode
-*                 |  |  |  |  |  |  |  |  |  |  |  1N/2N anode
-*                 |  |  |  |  |  |  |  |  |  |  |  |  1H/2H anode
-*                 |  |  |  |  |  |  |  |  |  |  |  |  |  1G/2G anode
-*                 |  |  |  |  |  |  |  |  |  |  |  |  |  |  DIGIT No. 1 Common cathode
-*                 |  |  |  |  |  |  |  |  |  |  |  |  |  |  |  1P/2P anode
-*                 |  |  |  |  |  |  |  |  |  |  |  |  |  |  |  |  1F/2F anode
-*                 |  |  |  |  |  |  |  |  |  |  |  |  |  |  |  |  |
-.SUBCKT HDSP_A27C 1  2  4  5  6  7  8  9  10 11 12 13 14 15 16 17 18
-
-DA1  12  16  dHDSP_A27C
-DB1  10  16  dHDSP_A27C
-DC1   9  16  dHDSP_A27C
-DD1   7  16  dHDSP_A27C
-DE1   1  16  dHDSP_A27C
-DF1  18  16  dHDSP_A27C
-DG1  15  16  dHDSP_A27C
-DH1  14  16  dHDSP_A27C
-DJ1   6  16  dHDSP_A27C
-DK1   5  16  dHDSP_A27C
-DL1   4  16  dHDSP_A27C
-DM1   2  16  dHDSP_A27C
-DN1  13  16  dHDSP_A27C
-DP1  17  16  dHDSP_A27C
-DDP1  8  16  dHDSP_A27C
-
-DA2  12  11  dHDSP_A27C
-DB2  10  11  dHDSP_A27C
-DC2   9  11  dHDSP_A27C
-DD2   7  11  dHDSP_A27C
-DE2   1  11  dHDSP_A27C
-DF2  18  11  dHDSP_A27C
-DG2  15  11  dHDSP_A27C
-DH2  14  11  dHDSP_A27C
-DJ2   6  11  dHDSP_A27C
-DK2   5  11  dHDSP_A27C
-DL2   4  11  dHDSP_A27C
-DM2   2  11  dHDSP_A27C
-DN2  13  11  dHDSP_A27C
-DP2  17  11  dHDSP_A27C
-DDP2  8  11  dHDSP_A27C
-
-.MODEL dHDSP_A27C D
-+ (  
-+    IS = 2.34165185E-18 
-+     N = 1.64080796 
-+    RS = 5.35791037 
-+    BV = 4.5
-+   IBV = 100u
-+ )  
-
-.ENDS HDSP_A27C

Miscellaneous Devices/HDSP_A511.ckt

@@ -1,50 +0,0 @@
-*  
-* Diode Model Produced by Altium Ltd  
-* Date:  10-Mar-2004 
-*  
-* Manufacturer: Agilent  
-* Component Name: HDSP-A511  
-*  
-* Parameters derived from information available in data sheet.  
-*
-*                 common-anode
-*                 |  cathode-f
-*                 |  |  cathode-g
-*                 |  |  |  cathode-e
-*                 |  |  |  |  cathode-d
-*                 |  |  |  |  |  common-anode
-*                 |  |  |  |  |  |  cathode-DP
-*                 |  |  |  |  |  |  |  cathode-c
-*                 |  |  |  |  |  |  |  |  cathode-b
-*                 |  |  |  |  |  |  |  |  |  cathode-a
-*                 |  |  |  |  |  |  |  |  |  |
-.SUBCKT HDSP_A511 1  2  3  4  5  6  7  8  9  10
-
-DA1  1  10 dHDSP_A511
-DB1  1   9 dHDSP_A511
-DC1  1   8 dHDSP_A511
-DD1  1   5 dHDSP_A511
-DE1  1   4 dHDSP_A511
-DF1  1   2 dHDSP_A511
-DG1  1   3 dHDSP_A511
-DDP1 1   7 dHDSP_A511
-
-DA2  6  10 dHDSP_A511
-DB2  6   9 dHDSP_A511
-DC2  6   8 dHDSP_A511
-DD2  6   5 dHDSP_A511
-DE2  6   4 dHDSP_A511
-DF2  6   2 dHDSP_A511
-DG2  6   3 dHDSP_A511
-DDP2 6   7 dHDSP_A511
-
-.MODEL dHDSP_A511 D
-+ (  
-+     IS = 1.61114016E-27 
-+      N = 1.30291189 
-+     RS = 12.83456794 
-+     BV = 50 
-+    IBV = 100u 
-+ )   
-
-.ENDS HDSP_A511

Miscellaneous Devices/HDSP_A513.ckt

@@ -1,50 +0,0 @@
-*  
-* Diode Model Produced by Altium Ltd  
-* Date:  10-Mar-2004 
-*  
-* Manufacturer: Agilent  
-* Component Name: HDSP-A513  
-*  
-* Parameters derived from information available in data sheet.  
-*
-*                 common-cathode
-*                 |  anode-f
-*                 |  |  anode-g
-*                 |  |  |  anode-e
-*                 |  |  |  |  anode-d
-*                 |  |  |  |  |  common-cathode
-*                 |  |  |  |  |  |  anode-DP
-*                 |  |  |  |  |  |  |  anode-c
-*                 |  |  |  |  |  |  |  |  anode-b
-*                 |  |  |  |  |  |  |  |  |  anode-a
-*                 |  |  |  |  |  |  |  |  |  |
-.SUBCKT HDSP_A513 1  2  3  4  5  6  7  8  9  10
-
-DA1  10  1 dHDSP_A513
-DB1   9  1 dHDSP_A513
-DC1   8  1 dHDSP_A513
-DD1   5  1 dHDSP_A513
-DE1   4  1 dHDSP_A513
-DF1   2  1 dHDSP_A513
-DG1   3  1 dHDSP_A513
-DDP1  7  1 dHDSP_A513
-
-DA2  10  6 dHDSP_A513
-DB2   9  6 dHDSP_A513
-DC2   8  6 dHDSP_A513
-DD2   5  6 dHDSP_A513
-DE2   4  6 dHDSP_A513
-DF2   2  6 dHDSP_A513
-DG2   3  6 dHDSP_A513
-DDP2  7  6 dHDSP_A513
-
-.MODEL dHDSP_A513 D
-+ (  
-+     IS = 1.61114016E-27 
-+      N = 1.30291189 
-+     RS = 12.83456794 
-+     BV = 50 
-+    IBV = 100u 
-+ )   
-
-.ENDS HDSP_A513

Miscellaneous Devices/IDEAL3W.ckt

@@ -1,21 +0,0 @@
-* Ideal Transformer Subcircuit Parameters
-* RATIO1 = turns ratio (= secondary1/primary)
-* RATIO2 = turns ratio (= secondary2/primary)
-*
-* Ideal Transformer with three windings
-* jjt 18/12/00: created using IDEAL4W (created by dw, 18/12/2000) as a template.
-* Connections:
-*               Pri+
-*               | Pri-
-*               | | Sec1+
-*               | | | Sec1-
-*               | | | | Sec2+
-*               | | | | | Sec2-
-*               | | | | | |
-*               | | | | | |
-*               | | | | | |
-.SUBCKT IDEAL3W 1 2 3 4 5 6 PARAMS: RATIO1=1 RATIO2=1
-BP  1 2 I=( -I(BS1)*{RATIO1} - I(BS2)*{RATIO2} )
-BS1 3 4 V=( V(1,2)*{RATIO1} )
-BS2 5 6 V=( V(1,2)*{RATIO2} )
-.ENDS IDEAL3W

Miscellaneous Devices/IDEAL4W.ckt

@@ -1,23 +0,0 @@
-*Ideal Transformer Subcircuit Parameters
-*RATIO1 = turns ratio (= secondary1/primary)
-*RATIO2 = turns ratio (= secondary2/primary)
-*RATIO3 = turns ratio (= secondary3/primary)
-*
-*Ideal Transformer with four windings
-*dw 18/12/00: created
-*Connections:
-*               Pri+
-*               | Pri-
-*               | | Sec1+
-*               | | | Sec1-
-*               | | | | Sec2+
-*               | | | | | Sec2-
-*               | | | | | | Sec3+
-*               | | | | | | | Sec3-
-*               | | | | | | | |
-.SUBCKT IDEAL4W 1 2 3 4 5 6 7 8 PARAMS: RATIO1=1 RATIO2=1 RATIO3=1
-BP  1 2 I=( -I(BS1)*{RATIO1} - I(BS2)*{RATIO2} - I(BS3)*{RATIO3} )
-BS1 3 4 V=( V(1,2)*{RATIO1} )
-BS2 5 6 V=( V(1,2)*{RATIO2} )
-BS3 7 8 V=( V(1,2)*{RATIO3} )
-.ENDS IDEAL4W

Miscellaneous Devices/IDEALTRANS.ckt

@@ -1,15 +0,0 @@
-*Ideal Transformer Subcircuit Parameters
-*RATIO = turns ratio (= secondary/primary)
-*
-*Ideal Transformer
-*dw 6/8/99: created
-*Connections:
-*                  Pri+
-*                  | Pri-
-*                  | | Sec+
-*                  | | | Sec-
-*                  | | | |
-.SUBCKT IDEALTRANS 1 2 3 4 PARAMS: RATIO=1
-BP  1 2 I=( -I(BS)*{RATIO} )
-BS  3 4 V=( V(1,2)*{RATIO} )
-.ENDS IDEALTRANS

Miscellaneous Devices/IDEALTRANSCT.ckt

@@ -1,19 +0,0 @@
-*Ideal Centre-Tapped Transformer Subcircuit Parameters
-*NP = Number of turns on the primary coil
-*NS1 = Number of turns on the first secondary coil
-*NS2 = Number of turns on the second secondary coil
-*
-*dw 6/8/99: created
-*
-*Connections:
-*                    Pri+
-*                    | Pri-
-*                    | | Sec+
-*                    | | | SecCT
-*                    | | | | Sec-
-*                    | | | | |
-.SUBCKT IDEALTRANSCT 1 2 3 4 5 PARAMS: NP=1 NS1=1 NS2=1
-BP  1 2 I=( (-I(BS1)*{NS1} -I(BS2)*{NS2})/{NP} )
-BS1 3 4 V=( V(1,2)*{NS1}/{NP} )
-BS2 4 5 V=( V(1,2)*{NS2}/{NP} )
-.ENDS IDEALTRANSCT

Miscellaneous Devices/IRF1010.ckt

@@ -1,25 +0,0 @@
-*IRF1010 MCE 4-2-96
-*55V  75A .014 ohm HEXFET pkg:TO-220 2,1,3
-.SUBCKT IRF1010  10 20 40 40
-M1   1  2  3  3  DMOS L=1U W=1U
-RD  10  1  5.65M
-RS  30  3  1.35M
-RG  20  2  12.1
-CGS  2  3  2.15N
-EGD 12  0  2  1  1
-VFB 14  0  0
-FFB  2  1  VFB  1
-CGD 13 14  4.49N
-R1  13  0  1
-D1  12 13  DLIM
-DDG 15 14  DCGD
-R2  12 15  1
-D2  15  0  DLIM
-DSD  3 10  DSUB
-LS  30 40  7.5N
-.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=114K ETA=2M VTO=3 KP=19.4)
-.MODEL DCGD D (CJO=4.49N VJ=.6 M=.68)
-.MODEL DSUB D (IS=311N N=1.5 RS=8.67M BV=55 CJO=4.08N VJ=.8 M=.42 TT=100N)
-.MODEL DLIM D (IS=100U)
-.ENDS IRF1010
-

Miscellaneous Devices/IRF9510.ckt

@@ -1,25 +0,0 @@
-*IRF9510  MCE  4-2-96
-*100V  4A  1.2 ohms HEXFET pkg:TO-220 2,1,3
-.SUBCKT IRF9510  10 20 40 40
-M1   1  2  3  3  DMOS L=1U W=1U
-RD  10  1  .569
-RS  30  3  31M
-RG  20  2  37.5
-CGS  2  3  182P
-EGD 12  0  1  2  1
-VFB 14  0  0
-FFB  1  2  VFB  1
-CGD 13 14  231P
-R1  13  0  1
-D1  12 13  DLIM
-DDG 15 14  DCGD
-R2  12 15  1
-D2  15  0  DLIM
-DSD 10  3  DSUB
-LS  30 40  7.5N
-.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=-3 KP=.471)
-.MODEL DCGD D (CJO=231P VJ=.6 M=.68)
-.MODEL DSUB D (IS=16.6N N=1.5 RS=1.18 BV=100 CJO=327P VJ=.8 M=.42 TT=82N)
-.MODEL DLIM D (IS=100U)
-.ENDS IRF9510
-

Miscellaneous Devices/IRGPC40U.ckt

@@ -1,36 +0,0 @@
-*IRGPC40U  MCE  C G E  7-13-95
-*600V 40A 24.3ns pkg:TO-247 2,1,3
-.SUBCKT IRGPC40U 71 72 74
-Q1  83 81 85     QOUT
-M1  81 82 83 83  MFIN L=1U W=1U
-DSD 83 81  DO
-DBE 85 81  DE
-RC  85 71  21.1M
-RE  83 73  2.11M
-RG  72 82  25.5
-CGE 82 83  1.42N
-CGC 82 71  1P
-EGD 91  0 82 81  1
-VFB 93  0  0
-FFB 82 81  VFB  1
-CGD 92 93  1.41N
-R1  92  0  1
-D1  91 92  DLIM
-DHV 94 93  DR
-R2  91 94  1
-D2  94  0  DLIM
-LE  73 74  7.5N
-DLV 94 95  DR 13
-RLV 95  0  1
-ESD 96 93  POLY(1) 83 81  19  1
-MLV 95 96 93 93  SW
-.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
-.MODEL QOUT PNP (IS=377F NF=1.2 BF=5.1 CJE=3.48N TF=24.3N XTB=1.3)
-.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=2.12)
-.MODEL DR D (IS=37.7F CJO=100P VJ=1 M=.82)
-.MODEL DO D (IS=37.7F BV=600 CJO=2.07N VJ=1 M=.7)
-.MODEL DE D (IS=37.7F BV=14.3 N=2)
-.MODEL DLIM D (IS=100N)
-.ENDS IRGPC40U 
-
-

Miscellaneous Devices/LED0.mdl

@@ -1,4 +0,0 @@
-*Typ INFRARED GaAs LED: Vf=1.2V Vr=5V If=40mA trr=3uS
-*LED Pinout: 1=A, 2=K
-.MODEL LED0 D (IS=93.5P RS=84M N=2.63 BV=5 IBV=10U
-+ CJO=2.97P VJ=.75 M=.333 TT=4.32U)

Miscellaneous Devices/LED1.mdl

@@ -1,4 +0,0 @@
-*Typ RED GaAs LED: Vf=1.7V Vr=4V If=40mA trr=3uS
-*LED Pinout: 1=A, 2=K
-.MODEL LED1 D (IS=93.2P RS=42M N=3.73 BV=4 IBV=10U
-+ CJO=2.97P VJ=.75 M=.333 TT=4.32U)

Miscellaneous Devices/LED2.mdl

@@ -1,4 +0,0 @@
-*Typ RED,GREEN,YELLOW,AMBER GaAs LED: Vf=2.1V Vr=4V If=40mA trr=3uS
-*LED Pinout: 1=A, 2=K
-.MODEL LED2 D (IS=93.1P RS=42M N=4.61 BV=4 IBV=10U
-+ CJO=2.97P VJ=.75 M=.333 TT=4.32U)

Miscellaneous Devices/LED3.mdl

@@ -1,4 +0,0 @@
-*Typ BLUE SiC LED: Vf=3.4V Vr=5V If=40mA trr=3uS
-*LED Pinout: 1=A, 2=K
-.MODEL LED3 D (IS=93.1P RS=42M N=7.47 BV=5 IBV=30U
-+ CJO=2.97P VJ=.75 M=.333 TT=4.32U)

Miscellaneous Devices/MAC15A8.ckt

@@ -1,29 +0,0 @@
-*MAC15A8 MCE 2-27-96
-*600V 15A pkg:TO-220 2,3,1
-.SUBCKT MAC15A8   1  2  3
-*     TERMINALS: MT2 G MT1
-QN1  5 4 3  NOUT OFF
-QN2 11 6 7  NOUT OFF
-QP1 6 11 3  POUT OFF
-QP2  4 5 7  POUT OFF
-DF  4  5  DZ OFF
-DR  6 11  DZ OFF
-RF  4 6  60MEG
-RT2 1 7  18.8M
-RH  7 6  87.5
-RGP 8 3  23.1
-RG  2 8  11.5
-RS  8 4  102
-DN  9 2  DIN OFF
-RN  9 3  41.6
-GNN  6 7 9 3 15.2M
-GNP  4 5 9 3 18.1M
-DP 2 10  DIP OFF
-RP 10 3  29.5
-GP  7 6 10 3 10.3M
-.MODEL DIN  D (IS=45.8F)
-.MODEL DIP  D (IS=45.8F N=1.2)
-.MODEL DZ   D (IS=45.8F N=1.5 IBV=10U BV=600)
-.MODEL POUT PNP (IS=45.8F BF=5 CJE=4.02N TF=38.2U)
-.MODEL NOUT NPN (IS=45.8F BF=20 CJE=4.02N CJC=804P TF=2.55U)
-.ENDS MAC15A8

Miscellaneous Devices/NI3WTRANS.ckt

@@ -1,45 +0,0 @@
-*Transformer Subcircuit Parameters
-*RATIO1 = Turns ratio= Secondary1/Primary
-*RATIO2 = Turns ratio= Secondary2/Primary
-*RPRI   = Primary DC resistance
-*R2D    = Secondary1 leakage resistance referred to the primary side
-*R3D    = Secondary2 leakage resistance referred to the primary side
-*L1     = Primary Leakage inductance
-*XM     = Magnetizing Reactance
-*RCORE  = Core Loss Resistance
-*X2D   = Secondary1 Leakage Reactance referred to the primary side
-*X3D   = Secondary2 Leakage Reactance referred to the primary side
-
-*Non-ideal 4-winding Transformer
-*jjt created 18/1/2001.
-*jjt 18/1/2002: changed LX2D,LX3D comments to match subcircuit parameters (X2D, X3D) to avoid possible confusion.
-*Connections:
-*                 Pri+
-*                 |   Pri-
-*                 |   |   Sec1+
-*                 |   |   |   Sec1-
-*                 |   |   |   |   Sec2+
-*                 |   |   |   |   |   Sec2-
-*                 |   |   |   |   |   |   
-*                 |   |   |   |   |   |   
-*                 |   |   |   |   |   |   
-*                 |   |   |   |   |   |   
-.SUBCKT NI3WTRANS 1   2   3   4   5   6      PARAMS: RATIO1=1 RATIO2=1 RPRI=0.1 R2D=0.1 R3D=0.1 L1=1U
-+ X2D=1u X3D=1u XM=1k RCORE=1Meg
-
-VISRC1   4 11 0V
-VISRC2   6 14 0V
-FCTRL1   10 2 VISRC1 {RATIO1}
-FCTRL2   13 2 VISRC2 {RATIO2}
-EVCVS1   3 11 10 2 {RATIO1}
-EVCVS2   5 14 13 2 {RATIO2}
-RRPRI    1 8 {RPRI}
-RR2D    9 10 {R2D}
-RR3D    12 13 {R3D}
-LL1   8 7 {L1}
-LX2D  7 9 {X2D}
-LX3D  7 12 {X3D}
-LXM   7 2 {XM}
-RRCORE 7 2 {RCORE}
-
-.ENDS NI3WTRANS

Miscellaneous Devices/NI4WTRANS.ckt

@@ -1,54 +0,0 @@
-*Transformer Subcircuit Parameters
-*RATIO1 = Turns ratio= Secondary1/Primary
-*RATIO2 = Turns ratio= Secondary2/Primary
-*RATIO3 = Turns ratio= Secondary3/Primary
-*RPRI   = Primary DC resistance
-*R2D    = Secondary1 leakage resistance referred to the primary side
-*R3D    = Secondary2 leakage resistance referred to the primary side
-*R4D    = Secondary3 leakage resistance referred to the primary side
-*L1     = Primary Leakage inductance
-*XM     = Magnetizing Reactance
-*RCORE  = Core Loss Resistance
-*X2D   = Secondary1 Leakage Reactance referred to the primary side
-*X3D   = Secondary2 Leakage Reactance referred to the primary side
-*X4D   = Secondary3 Leakage Reactance referred to the primary side
-
-*Non-ideal 4-winding Transformer
-*jjt created 17/1/2001.
-*jjt 18/1/2002: deleted a comment line (of default values) which lacked the asterisk, changed the parameter comments
-*               to be consistent with the parameters to avoid possible confusion.
-*Connections:
-*                 Pri+
-*                 |   Pri-
-*                 |   |   Sec1+
-*                 |   |   |   Sec1-
-*                 |   |   |   |   Sec2+
-*                 |   |   |   |   |   Sec2-
-*                 |   |   |   |   |   |   Sec3+
-*                 |   |   |   |   |   |   |   Sec3-
-*                 |   |   |   |   |   |   |   |
-*                 |   |   |   |   |   |   |   |
-.SUBCKT NI4WTRANS 1   2   3   4   5   6   7   8   PARAMS: RATIO1=1 RATIO2=1 RATIO3=1 RPRI=0.1 R2D=0.1 R3D=0.1 R4D=0.1 L1=1U
-+ X2D=1u X3D=1u X4D=1u XM=1k RCORE=1Meg
-
-VISRC1   4 13 0V
-VISRC2   6 16 0V
-VISRC3   8 19 0V 
-FCTRL1   12 2 VISRC1 {RATIO1}
-FCTRL2   15 2 VISRC2 {RATIO2}
-FCTRL3   18 2 VISRC3 {RATIO3}
-EVCVS1   3 13 12 2 {RATIO1}
-EVCVS2   5 16 15 2 {RATIO2}
-EVCVS3   7 19 18 2 {RATIO3}
-RRPRI    1 10 {RPRI}
-RR2D    11 12 {R2D}
-RR3D    14 15 {R3D}
-RR4D    17 18 {R4D}
-LL1   10 9 {L1}
-LX2D  9 11 {X2D}
-LX3D  9 14 {X3D}
-LX4D  9 17 {X4D}
-LXM   9 2 {XM}
-RRCORE 9 2 {RCORE}
-
-.ENDS NI4WTRANS

Miscellaneous Devices/NJFET.mdl

@@ -1,3 +0,0 @@
-*Default N-Ch J-FET pkg:TO-92B 3,1,2
-*NJFET Pinout: 1=D, 2=G, 3=S
-.MODEL NJFET NJF()

Miscellaneous Devices/NMESFET.mdl

@@ -1,2 +0,0 @@
-*Default N-Channel MESFET
-.MODEL NMESFET NMF()

Miscellaneous Devices/NMOS.mdl

@@ -1,3 +0,0 @@
-*Default N-Channel MOSFET
-*Pinout: D,G,S
-.MODEL NMOS NMOS()

Miscellaneous Devices/NPN.mdl

@@ -1,3 +0,0 @@
-*Default NPN BJT
-*NPN Trans Pinout: C,B,E
-.MODEL NPN NPN()

Miscellaneous Devices/NPN1.ckt

@@ -1,7 +0,0 @@
-*Default NPN Darlington Transistor pkg:TO-92B 1,2,3
-*NPN Trans Pinout: C,B,E
-.SUBCKT NPN1 1 2 3
-Q1 1 2 4 QMOD .1
-Q2 1 4 3 QMOD
-.MODEL QMOD NPN ()
-.ENDS NPN1