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*1N5408 MCE 8/5/97 |
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*Ref: International Rectifier Digest '94 |
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*1000V 3000mA 3us Si Diode pkg:DIODE0.4 1,2 |
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.MODEL 1N5408 D (IS=4.26N RS=14M N=1.7 BV=1E+03 IBV=165U |
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+ CJO=125P VJ=0.75 M=0.333 TT=4.32U) |
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