Merge branch 'master' of https://git.dk4777.ru/dkuznets/ad_libs

# Conflicts: # Capacitor.SchLib # Connector.SchLib # CustomCase.PcbLib # CustomCase2.PcbLib # Diode.SchLib # Electromechanics.SchLib # Inductor.SchLib # Modules.SchLib # Oscilator.SchLib # Pad_Via_Hole.PvLib # Resistor.SchLib # StandardCase.PcbLib # Transistor.SchLib # cleardir.bat # dk.LibPkg # ИМС.SchLib
new
140 changed files with 3291 additions and 0 deletions
--- a/Library.lnk
+++ b/Library.lnk
--- a/Capacitor.SchLib
+++ b/Capacitor.SchLib
--- a/Conn2.SchLib
+++ b/Conn2.SchLib
--- a/Connector.SchLib
+++ b/Connector.SchLib
--- a/CustomCase.PcbLib
+++ b/CustomCase.PcbLib
--- a/CustomCase2.PcbLib
+++ b/CustomCase2.PcbLib
--- a/Diode.SchLib
+++ b/Diode.SchLib
--- a/Electromechanics.SchLib
+++ b/Electromechanics.SchLib
--- a/Inductor.SchLib
+++ b/Inductor.SchLib
--- a/Devices/10TQ035.mdl
+++ b/Devices/10TQ035.mdl
@ -0,0 +1,7 @@
				@@ -0,0 +1,7 @@
+*10TQ035 MCE 3/26/98
+*Ref: IR Power Semiconductors Product Digest '94
+*MCE 35V 10A 3us pkg:TO-220 3,1
+.MODEL 10TQ035 D (IS=14.2N RS=4.2M N=1.7 BV=35 IBV=15M
+ CJO=412P VJ=0.75 M=0.333 TT=4.32U EG=.69 XTI=2)
+
+
--- a/Devices/10TQ040.mdl
+++ b/Devices/10TQ040.mdl
@ -0,0 +1,7 @@
				@@ -0,0 +1,7 @@
+*10TQ040 MCE 3/26/98
+*Ref: IR Power Semiconductors Product Digest '94
+*MCE 40V 10A 3us pkg:TO-220 3,1
+.MODEL 10TQ040 D (IS=14.2N RS=4.2M N=1.7 BV=40 IBV=15M
+ CJO=412P VJ=0.75 M=0.333 TT=4.32U EG=.69 XTI=2)
+
+
--- a/Devices/10TQ045.mdl
+++ b/Devices/10TQ045.mdl
@ -0,0 +1,7 @@
				@@ -0,0 +1,7 @@
+*10TQ045 MCE 3/26/98
+*Ref: IR Power Semiconductors Product Digest '94
+*MCE 45V 10A 3us pkg:TO-220 3,1
+.MODEL 10TQ045 D (IS=14.2N RS=4.2M N=1.7 BV=45 IBV=15M
+ CJO=412P VJ=0.75 M=0.333 TT=4.32U EG=.69 XTI=2)
+
+
--- a/Devices/11DQ03.mdl
+++ b/Devices/11DQ03.mdl
@ -0,0 +1,7 @@
				@@ -0,0 +1,7 @@
+*11DQ03 MCE 7-17-95
+*Ref: IR Power Semiconductors Product Digest '94
+*MCE 30V 1.1A pkg:DIODE0.4 1,2
+.MODEL 11DQ03 D(IS=5.18E-9 RS=0.146 N=0.878 TT=4.32E-6 CJO=1.18E-10 
+ VJ=0.75 M=0.333 EG=0.69 XTI=2 BV=30 IBV=6.01E-6 )
+
+
--- a/Devices/12AU7.ckt
+++ b/Devices/12AU7.ckt
@ -0,0 +1,35 @@
				@@ -0,0 +1,35 @@
+*Vacuum Tube Dual Triode (Audio freq.)
+*Connections:
+*              Plate 1
+*              | Grid 1
+*              | | Cathode 1
+*              | | | Plate 2
+*              | | | | Grid 2
+*              | | | | | Cathode 2
+*              | | | | | | H H HM
+*              | | | | | | | | |
+.SUBCKT 12AU7  1 2 3 6 7 8 4 5 9
+X1 1 2 3 12AU7s
+X2 6 7 8 12AU7s
+RH1 4 9 100
+RH2 5 9 100
+.ENDS 12AU7
+
+*Vacuum Tube Triode (Audio freq.)
+*Connections:
+*              Plate
+*              | Grid
+*              | | Cathode
+*              | | |
+.SUBCKT 12AU7s 1 3 4
+B1 2 4 I=((URAMP((V(2,4)/18)+V(3,4)))^1.5)/1151
+C1 3 4 1.6E-12
+C2 3 1 1.5E-12
+C3 1 4 0.5E-12
+R1 3 5 10E+3
+D1 1 2 DX
+D2 4 2 DX2
+D3 5 4 DX
+.MODEL DX D(IS=1.0E-12 RS=1.0)
+.MODEL DX2 D(IS=1.0E-9 RS=1.0)
+.ENDS 12AU7s
--- a/Devices/12AX7.ckt
+++ b/Devices/12AX7.ckt
@ -0,0 +1,35 @@
				@@ -0,0 +1,35 @@
+*Vacuum Tube Dual Triode (Audio freq.)
+*Connections:
+*              Plate 1
+*              | Grid 1
+*              | | Cathode 1
+*              | | | Plate 2
+*              | | | | Grid 2
+*              | | | | | Cathode 2
+*              | | | | | | H H HM
+*              | | | | | | | | |
+.SUBCKT 12AX7  1 2 3 6 7 8 4 5 9
+X1 1 2 3 12AX7s
+X2 6 7 8 12AX7s
+RH1 4 9 100
+RH2 5 9 100
+.ENDS 12AX7
+
+*Vacuum Tube Triode (Audio freq.) pkg:VT-9 (A:1,2,3)(B:6,7,8)
+*Connections:
+*              Plate
+*              | Grid
+*              | | Cathode
+*              | | |
+.SUBCKT 12AX7s 1 3 4
+B1 2 4 I=((URAMP((V(2,4)/85)+V(3,4)))^1.5)/580
+C1 3 4 1.6E-12
+C2 3 1 1.7E-12
+C3 1 4 0.46E-12
+R1 3 5 50E+3
+D1 1 2 DX
+D2 4 2 DX2
+D3 5 4 DX
+.MODEL DX D(IS=1.0E-12 RS=1.0)
+.MODEL DX2 D(IS=1.0E-9 RS=1.0)
+.ENDS X12AX7s
--- a/Devices/18TQ045.mdl
+++ b/Devices/18TQ045.mdl
@ -0,0 +1,20 @@
				@@ -0,0 +1,20 @@
+**************************************
+*      Model Generated by MODPEX     *
+*Copyright(c) Symmetry Design Systems*
+*         All Rights Reserved        *
+*    UNPUBLISHED LICENSED SOFTWARE   *
+*   Contains Proprietary Information *
+*      Which is The Property of      *
+*     SYMMETRY OR ITS LICENSORS      *
+*Commercial Use or Resale Restricted *
+*   by Symmetry License Agreement    *
+**************************************
+* Model generated on Sep 17, 96
+* MODEL FORMAT: SPICE3
+.MODEL 18tq045 d
+(
+IS=1.97424e-13 RS=0.00628392 N=0.530234 EG=0.6
+XTI=0.05 BV=45 IBV=0.0001 CJO=8.24939e-09
+VJ=1.5 M=0.462568 FC=0.5 TT=0
+KF=0 AF=1
+)
--- a/Devices/1N4001.mdl
+++ b/Devices/1N4001.mdl
@ -0,0 +1,5 @@
				@@ -0,0 +1,5 @@
+*1N4001 MCE 8-16-95
+*50V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
+.MODEL 1N4001 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=50 IBV=1E-5 )
+
--- a/Devices/1N4002.mdl
+++ b/Devices/1N4002.mdl
@ -0,0 +1,6 @@
				@@ -0,0 +1,6 @@
+*1N4002 MCE 8-16-95
+*100V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
+.MODEL 1N4002 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=100 IBV=1E-5 )
+
+
--- a/Devices/1N4003.mdl
+++ b/Devices/1N4003.mdl
@ -0,0 +1,5 @@
				@@ -0,0 +1,5 @@
+*1N4003 MCE 8-16-95
+*200V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
+.MODEL 1N4003 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=200 IBV=1.98E-5 )
+
--- a/Devices/1N4004.mdl
+++ b/Devices/1N4004.mdl
@ -0,0 +1,6 @@
				@@ -0,0 +1,6 @@
+*1N4004 MCE 8-16-95
+*400V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
+.MODEL 1N4004 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=400 IBV=3.95E-5 )
+
+
--- a/Devices/1N4005.mdl
+++ b/Devices/1N4005.mdl
@ -0,0 +1,6 @@
				@@ -0,0 +1,6 @@
+*1N4005 MCE 8-16-95
+*600V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
+.MODEL 1N4005 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=600 IBV=5.92E-5 )
+
+
--- a/Devices/1N4006.mdl
+++ b/Devices/1N4006.mdl
@ -0,0 +1,6 @@
				@@ -0,0 +1,6 @@
+*1N4006 MCE 8-16-95
+*800V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
+.MODEL 1N4006 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=800 IBV=7.89E-5 )
+
+
--- a/Devices/1N4007.mdl
+++ b/Devices/1N4007.mdl
@ -0,0 +1,5 @@
				@@ -0,0 +1,5 @@
+*1N4007 MCE 8-16-95
+*1000V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
+.MODEL 1N4007 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=1000 IBV=9.86E-5 )
+
--- a/Devices/1N4148.mdl
+++ b/Devices/1N4148.mdl
@ -0,0 +1,2 @@
				@@ -0,0 +1,2 @@
+.model 1N4148  D(Is=0.1p Rs=16 CJO=2p Tt=12n Bv=100 Ibv=0.1p)
+*          85-??-??   Original library
--- a/Devices/1N4149.mdl
+++ b/Devices/1N4149.mdl
@ -0,0 +1,7 @@
				@@ -0,0 +1,7 @@
+*1N4149 MCE 3-13-97
+*Ref: National Discrete Products Databook, 1996
+*75V 10mA Si Computer Diode pkg:DIODE0.4 1,2
+.MODEL 1N4149 D (IS=14.2P RS=4.2 N=1.7 BV=75 IBV=5U
+ CJO=1.74P VJ=0.75 M=0.333 TT=4.32N)
+
+
--- a/Devices/1N4150.mdl
+++ b/Devices/1N4150.mdl
@ -0,0 +1,2 @@
				@@ -0,0 +1,2 @@
+.model 1N4150 D(Is=10E-15 Rs=1.0 CJO=1.3p Tt=12n Bv=70 Ibv=0.1p)
+*          85-??-??   Original library
--- a/Devices/1N4448.mdl
+++ b/Devices/1N4448.mdl
@ -0,0 +1,2 @@
				@@ -0,0 +1,2 @@
+.model 1N4448  D(Is=0.1p Rs=2 CJO=2p Tt=12n Bv=100 Ibv=0.1p)
+*          85-??-??   Original library
--- a/Devices/1N4934.mdl
+++ b/Devices/1N4934.mdl
@ -0,0 +1,5 @@
				@@ -0,0 +1,5 @@
+*1N4934 MCE
+*400V 1A Si Rectifier pkg:DIODE0.4 1,2
+.MODEL 1N4934 D(IS=2.54E-10 RS=6.874E-6 N=1.498 TT=1.086E-8 CJO=3.135E-11 
+ VJ=0.5581 M=0.4379 BV=100 IBV=0.0001 )
+
--- a/Devices/1N5400.mdl
+++ b/Devices/1N5400.mdl
@ -0,0 +1,6 @@
				@@ -0,0 +1,6 @@
+*1N5400 MCE
+* 50V 3A Si Rectifier pkg:DO-201 1,2
+.MODEL 1N5400 D(IS=2.68E-12 RS=0.00977 N=1.17 TT=1.44E-5 CJO=1.24E-10 
+ VJ=0.6 M=0.333 BV=66.6 IBV=1E-5 )
+
+
--- a/Devices/1N5401.mdl
+++ b/Devices/1N5401.mdl
@ -0,0 +1,5 @@
				@@ -0,0 +1,5 @@
+*1N5401 MCE
+*100V 3A Si Rectifier pkg:DO-201 1,2
+.MODEL 1N5401 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 
+ VJ=0.6 M=0.333 BV=133.2 IBV=1E-5 )
+
--- a/Devices/1N5402.mdl
+++ b/Devices/1N5402.mdl
@ -0,0 +1,6 @@
				@@ -0,0 +1,6 @@
+*1N5402 MCE
+*200V 3A Si Rectifier pkg:DO-201 1,2
+.MODEL 1N5402 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 
+ VJ=0.6 M=0.333 BV=266 IBV=1E-5 )
+
+
--- a/Devices/1N5404.mdl
+++ b/Devices/1N5404.mdl
@ -0,0 +1,6 @@
				@@ -0,0 +1,6 @@
+*1N5404 MCE
+*400V 3A Si Rectifier pkg:DO-201 1,2
+.MODEL 1N5404 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 
+ VJ=0.6 M=0.333 BV=533 IBV=1E-5 )
+
+
--- a/Devices/1N5406.mdl
+++ b/Devices/1N5406.mdl
@ -0,0 +1,6 @@
				@@ -0,0 +1,6 @@
+*1N5406 MCE
+*600V 3A Si Rectifier pkg:DO-201 1,2
+.MODEL 1N5406 D(IS=2.68E-12 RS=0.00731 N=1.17 TT=1.44E-5 CJO=1.24E-10 
+ VJ=0.6 M=0.333 BV=900 IBV=1E-5 )
+
+
--- a/Devices/1N5407.mdl
+++ b/Devices/1N5407.mdl
@ -0,0 +1,7 @@
				@@ -0,0 +1,7 @@
+*1N5407 MCE 8/5/97
+*Ref: International Rectifier Digest '94
+*800V 3000mA 3us Si Diode pkg:DIODE0.4 1,2
+.MODEL 1N5407 D (IS=4.26N RS=14M N=1.7 BV=800 IBV=132U
+ CJO=125P VJ=0.75 M=0.333 TT=4.32U)
+
+
--- a/Devices/1N5408.mdl
+++ b/Devices/1N5408.mdl
@ -0,0 +1,7 @@
				@@ -0,0 +1,7 @@
+*1N5408 MCE 8/5/97
+*Ref: International Rectifier Digest '94
+*1000V 3000mA 3us Si Diode pkg:DIODE0.4 1,2
+.MODEL 1N5408 D (IS=4.26N RS=14M N=1.7 BV=1E+03 IBV=165U
+ CJO=125P VJ=0.75 M=0.333 TT=4.32U)
+
+
--- a/Devices/1N914.mdl
+++ b/Devices/1N914.mdl
@ -0,0 +1,2 @@
				@@ -0,0 +1,2 @@
+.model 1N914 D(Is=0.1p Rs=16 CJO=2p Tt=12n Bv=100 Ibv=0.1p)
+*          85-??-??   Original library
--- a/Devices/2N3904.mdl
+++ b/Devices/2N3904.mdl
@ -0,0 +1,6 @@
				@@ -0,0 +1,6 @@
+*2N3904
+*Si 310mW  40V 200mA 300MHz pkg:TO-92B 1,2,3
+.MODEL 2N3904 NPN(IS=1.4E-14 BF=300 VAF=100 IKF=0.025 ISE=3E-13 
+ BR=7.5 RC=2.4 CJE=4.5E-12 TF=4E-10 CJC=3.5E-12 TR=2.1E-8 XTB=1.5 KF=9E-16 )
+
+
--- a/Devices/2N3906.mdl
+++ b/Devices/2N3906.mdl
@ -0,0 +1,7 @@
				@@ -0,0 +1,7 @@
+*2N3906
+*Si 310mW  40V 200mA 250MHz pkg:TO-92B 1,2,3
+.MODEL 2N3906 PNP(IS=4E-14 BF=400 VAF=50 IKF=0.02 ISE=7E-15 NE=1.16 
+ BR=7.5 RC=2.4 CJE=6.3E-12 VJE=0.75 TF=5E-10 CJC=5.8E-12 VJC=0.75 TR=2.3E-8 
+ VJS=0.75 XTB=1.5 KF=6E-16 )
+
+
--- a/Devices/5082_7616.ckt
+++ b/Devices/5082_7616.ckt
@ -0,0 +1,41 @@
				@@ -0,0 +1,41 @@
+*  
+* Diode Model Produced by Altium Ltd  
+* Date:  7-Apr-2004 
+*  
+* Manufacturer: Agilent  
+* Component Name: 5082-7616  
+*  
+* Parameters derived from information available in data sheet.  
+*
+*                 anode-d
+*                 |  cathode-d
+*                 |  |  cathode-c
+*                 |  |  |  cathode-e
+*                 |  |  |  |  anode-e
+*                 |  |  |  |  |  anode-c
+*                 |  |  |  |  |  |  anode-DP
+*                 |  |  |  |  |  |  |  cathode-DP
+*                 |  |  |  |  |  |  |  |  cathode-b
+*                 |  |  |  |  |  |  |  |  |  cathode-a
+*                 |  |  |  |  |  |  |  |  |  |  anode-a
+*                 |  |  |  |  |  |  |  |  |  |  |  anode-b
+*                 |  |  |  |  |  |  |  |  |  |  |  |  
+.SUBCKT 5082_7616 1  3  4  5  6  7  8  10 11 12 13 14
+
+DA  13 12 d5082_7616
+DB  14 11 d5082_7616
+DC   7  4 d5082_7616
+DD   1  3 d5082_7616
+DE   6  5 d5082_7616
+DDP  8 10 d5082_7616
+
+.MODEL d5082_7616 D
+ (  
+     IS = 1.95991353E-12 
+      N = 2.90687588 
+     RS = 18.38470387 
+     BV = 30
+    IBV = 100u 
+ )  
+
+.ENDS 5082_7616
--- a/Devices/6L6GC.ckt
+++ b/Devices/6L6GC.ckt
@ -0,0 +1,23 @@
				@@ -0,0 +1,23 @@
+*Vacuum Tube Tetrode (Audio freq.)
+*Connections:
+*             Plate
+*             | Screen
+*             | | Grid
+*             | | | Cathode
+*             | | | |
+.SUBCKT 6L6GC 1 6 3 4
+B1 2 4 I=(((URAMP((V(7,4)/8)+V(3,4)))^1.5)/1456)*ATAN(V(1,4)/10)
+B2 7 4 I=((URAMP((V(7,4)/8)+V(3,4)))^1.5)/9270
+C1 3 4 10P
+C2 3 1 0.6P
+C3 1 4 6.5P
+R1 3 5 1.5K
+R2 2 4 100K
+D1 1 2 DX
+D2 4 2 DX2
+D3 5 4 DX
+D4 6 7 DX
+D5 4 7 DX2
+.MODEL DX D(IS=1.0P RS=1.0)
+.MODEL DX2 D(IS=1.0N RS=1.0)
+.ENDS 6L6GC
--- a/Devices/6SN7.ckt
+++ b/Devices/6SN7.ckt
@ -0,0 +1,34 @@
				@@ -0,0 +1,34 @@
+*Vacuum Tube Dual Triode (Audio freq.)
+*Connections:
+*              Plate 1
+*              | Grid 1
+*              | | Cathode 1
+*              | | | Plate 2
+*              | | | | Grid 2
+*              | | | | | Cathode 2
+*              | | | | | | H H
+*              | | | | | | | |
+.SUBCKT 6SN7   2 1 3 5 4 6 7 8
+X1 2 1 3  6SN7s
+X2 5 4 6 6SN7s
+RH1 7 8 100
+.ENDS 6SN7
+
+*Vacuum Tube Triode (Audio freq.)
+*Connections:
+*            Plate
+*            | Grid
+*            | | Cathode
+*            | | |
+.SUBCKT 6SN7s 1 3 4
+B1 2 4 I=((URAMP((V(2,4)/20)+V(3,4)))^1.5)/1086
+C1 3 4 2.6E-12
+C2 3 1 4.0E-12
+C3 1 4 0.7E-12
+R1 3 5 10E+3
+D1 1 2 DX
+D2 4 2 DX2
+D3 5 4 DX
+.MODEL DX D(IS=1.0E-12 RS=1.0)
+.MODEL DX2 D(IS=1.0E-9 RS=1.0)
+.ENDS 6SN7s
--- a/Devices/7199.ckt
+++ b/Devices/7199.ckt
@ -0,0 +1,60 @@
				@@ -0,0 +1,60 @@
+*Vacuum Tube Pentode and Triode (Audio freq.)
+*Connections:
+*            Plate 1
+*            | Grid 1
+*            | | Cathode 1
+*            | | | Plate 2
+*            | | | | Grid 2
+*            | | | | | Grid 3
+*            | | | | | | Cathode 2
+*            | | | | | | | Heater
+*            | | | | | | | | Heater
+*            | | | | | | | | |
+.SUBCKT 7199 1 9 8 2 3 7 6 4 5
+X1 1 9 8 7199T
+X2 2 3 7 6 7199P
+RH 4 5 100
+.ENDS 7199
+
+*Vacuum Tube Triode (Audio freq.)
+*Connections:
+*             Plate
+*             | Grid
+*             | | Cathode
+*             | | |
+.SUBCKT 7199T 1 3 4
+B1 2 4 I=((URAMP((V(2,4)/17)+V(3,4)))^1.5)/711
+C1 3 4 2.3E-12
+C2 3 1 2.0E-12
+C3 1 4 0.3E-12
+R1 3 5 5E+3
+D1 1 2 DX
+D2 4 2 DX2
+D3 5 4 DX
+.MODEL DX D(IS=1.0E-12 RS=1.0)
+.MODEL DX2 D(IS=1.0E-9 RS=1.0)
+.ENDS 7199T
+
+*Vacuum Tube Tetrode (Audio freq.)
+*Connections:
+*             Plate
+*             | Screen
+*             | | Grid
+*             | | | Cathode
+*             | | | |
+.SUBCKT 7199P 1 6 3 4
+B1 2 4 I=(((URAMP((V(7,4)/20)+V(3,4)))^1.5)/1206)*ATAN(V(1,4)/10)
+B2 7 4 I=((URAMP((V(7,4)/20)+V(3,4)))^1.5)/2562
+C1 3 4 5.0P
+C2 3 1 0.06P
+C3 1 4 2.0P
+R1 3 5 5K
+R2 2 4 2.5MEG
+D1 1 2 DX
+D2 4 2 DX2
+D3 5 4 DX
+D4 6 7 DX
+D5 4 7 DX2
+.MODEL DX D(IS=1.0P RS=1.0)
+.MODEL DX2 D(IS=1.0N RS=1.0)
+.ENDS 7199P
--- a/Devices/AD645A.ckt
+++ b/Devices/AD645A.ckt
@ -0,0 +1,148 @@
				@@ -0,0 +1,148 @@
+* AD645A SPICE Macro-model                  4/92, Rev. B
+*                                           JCB / PMI
+*
+* Revision History:
+*     Rev. B:  Converted model to include noise analysis. 
+*
+* This version of the AD645 model simulates the worst case 
+* parameters of the 'A' grade.  The worst case parameters
+* used correspond to those in the data sheet.
+*
+* Copyright 1990 by Analog Devices, Inc.
+*
+* Refer to "README.DOC" file for License Statement.  Use of this model
+* indicates your acceptance with the terms and provisions in the License Statement.
+*
+* Node assignments
+*                non-inverting input
+*                |   inverting input
+*                |   |   positive supply
+*                |   |   |   negative supply
+*                |   |   |   |   output
+*                |   |   |   |   |
+.SUBCKT AD645A   1   2   99  50  30
+*
+* INPUT STAGE & POLE AT 40 MHZ
+*
+R3   5  50    1.049
+R4   6  50    1.049
+CIN  1   2    1E-12
+C2   5   6    1.90E-9
+I1   99  4    100E-3
+IOS  1   2    0.5E-12
+EOS  65  1    POLY(1)  17 24  500E-6  1
+J1   5   2    4   JX
+J2   6   7    4   JX
+EN   7  65    43  0  1
+GN1  0   1    47  0  1E-6
+GN2  0   2    61  0  1E-6
+GB1  2  50    POLY(3) 4,2 5,2 50,2 0 1E-12 1E-12 1E-12
+GB2  7  50    POLY(3) 4,7 6,7 50,7 0 1E-12 1E-12 1E-12
+*
+EREF 98  0    24  0   1
+*
+* VOLTAGE NOISE GENERATOR
+*
+VN1  41  0    DC 2
+RS1  41 42    11.8E3
+RS2  42 43    1.2E9
+CS1  42 43    79.8E-11
+RS3  43 44    1.2E9
+CS2  43 44    79.8E-11
+RS4  44 45    11.8E3
+VN2  0  45    DC 2
+*
+* CURRENT NOISE GENERATOR
+*
+VN3  46  0    DC 2
+RN5  46 47    144
+RN6  47 48    144
+VN4  0  48    DC 2
+*
+* CURRENT NOISE GENERATOR
+*
+VN5  60  0    DC 2
+RN7  60 61    144
+RN8  61 62    144
+VN6  0  62    DC 2
+*  
+* SECOND STAGE & POLE AT 3 HZ
+*
+R5   9  98    5.26E5
+C3   9  98    1.00E-7
+G1   98  9    5  6  9.53E-1
+V2   99  8    4.7
+V3   10 50    4.7
+D1   9   8    DX
+D2   10  9    DX
+*
+* NEGATIVE ZERO AT 15 MHZ
+*
+R6   11 12     1E6
+C4   11 12     -10.6E-15
+R7   12 98     1
+E2   11 98     9  24  1E6
+*
+* POLE AT 40 MHZ
+*
+R8   13 98     1E3
+C5   13 98     3.98E-12
+G2   98 13     12 24  1E-3
+*
+* POLE AT 40 MHZ
+*
+R9   14 98     1E3
+C6   14 98     3.98E-12
+G3   98 14     13 24  1E-3
+*
+* POLE AT 40 MHZ
+*
+R10  15 98     1E3
+C7   15 98     3.98E-12
+G4   98 15     14 24  1E-3
+*
+* COMMON-MODE GAIN NETWORK WITH ZERO AT 600 HZ
+*
+R11  16 17     1E6
+C8   16 17     2.65E-10
+R12  17 98     1
+E3   16 98     POLY(2) 1  98  2  98  0  15.8  15.8
+*
+* POLE AT 40 MHZ
+*
+R13  18 98     1E3
+C9   18 98     3.98E-12
+G5   98 18     15 24  1E-3
+*
+* OUTPUT STAGE
+*
+R14  24 99     2000E3
+R15  24 50     2000E3
+ISY  99 50     -96.5E-3
+R16  29 99     360
+R17  29 50     360
+L1   29 30     1E-8
+G6   27 50     18 29  2.78E-3
+G7   28 50     29 18  2.78E-3
+G8   29 99     99 18  2.78E-3
+G9   50 29     18 50  2.78E-3
+V4   25 29     2.0
+V5   29 26     2.0
+D3   18 25     DX
+D4   26 18     DX
+D5   99 27     DX
+D6   99 28     DX
+D7   50 27     DY
+D8   50 28     DY
+F1   29  0     V4  1
+F2   0  29     V5  1
+*
+* MODELS USED
+*
+.MODEL JX PJF(BETA=4.54  VTO=-2.000  IS=2.5E-12 RD=0.1
+ RS=0.1 CGD=1E-15 CGS=1E-15)
+.MODEL DX   D(IS=1E-15 RS=10 CJO=1E-15)
+.MODEL DY   D(IS=1E-15 BV=50 RS=10 CJO=1E-15)
+.MODEL DEN  D(IS=1E-12 RS=7409.6 KF=2.051E-15 AF=1)
+.MODEL DIN  D(IS=1E-12 RS=41.5 KF=0 AF=1)
+.ENDS AD645A
--- a/Devices/ADC8.mdl
+++ b/Devices/ADC8.mdl
@ -0,0 +1,4 @@
				@@ -0,0 +1,4 @@
+* 8-Bit generic A/D converter
+* INPUTS  VCC, GND, VIN, VRP, VRM, SC, OE;
+* OUTPUTS VCC_LD, SC_LD, OE_LD, OC, D0, D1, D2, D3, D4, D5, D6, D7;
+.MODEL ADC8 xsimcode(file="{MODEL_PATH}ADC8.scb" func=ADC8 {mntymx})
--- a/Devices/BAS116.mdl
+++ b/Devices/BAS116.mdl
@ -0,0 +1,6 @@
				@@ -0,0 +1,6 @@
+*****************************************************************
+.MODEL BAS116 D(
+       AF= 1.00E+00    BV= 7.50E+01   CJO= 1.83E-12    EG= 1.11E+00
+       FC= 5.00E-01   IBV= 1.00E-04    IS= 1.48E-13    KF= 0.00E+00
+        M= 2.62E-01     N= 1.33E+00    RS= 8.48E-01    TT= 8.66E-09
+       VJ= 3.44E-01   XTI= 3.00E+00) 
--- a/Devices/BAS16.ckt
+++ b/Devices/BAS16.ckt
@ -0,0 +1,20 @@
				@@ -0,0 +1,20 @@
+*****************************************************************
+* SPICE2G6 MODEL OF THE DIODE BAS16 (SOT-23)                    *
+* REV: 98.1                  DANALYSE GMBH BERLIN (27.07.1998)  *
+*****************************************************************
+* jjt 30/10/2000: moved the model into the subckt
+*                 
+.SUBCKT BAS16 1 2
+D    3 4 DBAS16
+L1   1 3 0.350N
+L2   4 2 0.350N
+.MODEL DBAS16 D
+ IS  =  2.7838E-09
+ N   =  1.8703
+ RS  =  1.3548
+ EG  =  1.0637
+ XTI =  1.5000
+ CJO =  0.6000E-12
+ VJ  =  0.2000
+ M   =  0.1000
+.ENDS
--- a/Devices/BAS21.mdl
+++ b/Devices/BAS21.mdl
@ -0,0 +1,6 @@
				@@ -0,0 +1,6 @@
+*****************************************************************
+.MODEL BAS21 D(
+       AF= 1.00E+00    BV= 2.50E+02   CJO= 6.64E-13    EG= 1.11E+00
+       FC= 5.00E-01   IBV= 1.00E-04    IS= 6.42E-09    KF= 0.00E+00
+        M= 1.00E-01     N= 1.98E+00    RS= 9.12E-01    TT= 7.21E-08
+       VJ= 2.00E+00   XTI= 3.00E+00)
--- a/Devices/BAS70.mdl
+++ b/Devices/BAS70.mdl
@ -0,0 +1,6 @@
				@@ -0,0 +1,6 @@
+*****************************************************************
+.MODEL BAS70 D(IS=3N N=1.06 RS=29 XTI=1.8 EG=.68 
+ CJO=1.55P M=.29 VJ=.36 FC=.5 BV=70 IBV=100n TT=25P)
+* ISR=2.5n NR=1k IKF=5m
+* for 27C reverse current simulation use: GMIN=.5e-9
+* 17.12.1993 SIEMENS PD1 KURTH
--- a/Devices/BAT17.mdl
+++ b/Devices/BAT17.mdl
@ -0,0 +1,5 @@
				@@ -0,0 +1,5 @@
+*****************************************************************
+* BAT17x Series Diode Model
+.MODEL D188 D(IS=4n RS=3.3 N=1.03 XTI=2 EG=.65
+ CJO=415f M=.156 VJ=.115 FC=.5 BV=12 IBV=5U TT=25p)
+* 07.09.95 SIEMENS PD1 KURTH
--- a/Devices/BAT18.mdl
+++ b/Devices/BAT18.mdl
@ -0,0 +1,5 @@
				@@ -0,0 +1,5 @@
+*****************************************************************
+* BAT18 Diode Model
+.MODEL BAT18 D(IS=185F RS=.30 N=1.305 BV=70 IBV=.1N
+ CJO=1.17P VJ=.12 M=.096 TT=125N)
+* SIEMENS 40 Volt 125ns  Si-PIN-Switch  17-03-1996 Moschovis
--- a/Devices/BBY31.mdl
+++ b/Devices/BBY31.mdl
@ -0,0 +1,24 @@
				@@ -0,0 +1,24 @@
+*   ZETEX  BBY31  Spice Model        Last revision 18/8/92
+*
+.MODEL BBY31 D IS=10.01E-15 N=1.095 RS=.2082 XTI=3 
+      EG=1.11 CJO=27.36E-12 M=1.001 VJ=2.099 FC=.5 BV=45.12 
+      IBV=92.44E-3 TT=145.7E-9
+*
+*    + ISR=7.447E-12 NR=2.334 IKF=10.15 (LATER SPICE VERSIONS ONLY)
+*
+*NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE OF 2.5E-9H AND SET
+*  RS=0.60 FOR 2V, 0.53 FOR 5V, 0.45 FOR 10V OR 0.39 FOR 20V BIAS.
+*
+*                          (C)  1992 ZETEX PLC
+*
+*   The copyright in this model  and  the design embodied belong to
+*   Zetex PLC ("Zetex"). It is supplied free of charge by Zetex for
+*   the purpose  of research  and design  and may be used or copied
+*   intact (including this notice) for that purpose only. All other
+*   rights  are  reserved.  The model  is believed  accurate but no
+*   condition or warranty as to its  merchantability or fitness for
+*   purpose  is  given  and  no liability  in respect of any use is
+*   accepted by Zetex PLC, its distributors or agents.
+*
+*
+*   Zetex PLC, Fields New Road, Chadderton, Oldham  OL9 8NP
--- a/Devices/BBY40.mdl
+++ b/Devices/BBY40.mdl
@ -0,0 +1,24 @@
				@@ -0,0 +1,24 @@
+*   ZETEX  BBY40  Spice Model        Last revision 18/8/92
+*
+.MODEL BBY40 D IS=7.417E-15 N=1.058 RS=.1259 XTI=3 
+      EG=1.11 CJO=64.39E-12 M=1.013 VJ=2.566 FC=.5 BV=45.12 
+      IBV=.1232 TT=215E-9
+*
+*    + ISR=1.731E-12 NR=2.27 IKF 9.882 (LATER SPICE VERSIONS ONLY)
+*
+*NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE OF 2.5E-9H AND SET
+*  RS=0.47 FOR 2V, 0.39 FOR 5V, 0.32 FOR 10V OR 0.28 FOR 20V BIAS.
+*
+*                          (C)  1992 ZETEX PLC
+*
+*   The copyright in this model  and  the design embodied belong to
+*   Zetex PLC ("Zetex"). It is supplied free of charge by Zetex for
+*   the purpose  of research  and design  and may be used or copied
+*   intact (including this notice) for that purpose only. All other
+*   rights  are  reserved.  The model  is believed  accurate but no
+*   condition or warranty as to its  merchantability or fitness for
+*   purpose  is  given  and  no liability  in respect of any use is
+*   accepted by Zetex PLC, its distributors or agents.
+*
+*
+*   Zetex PLC, Fields New Road, Chadderton, Oldham  OL9 8NP
--- a/Devices/Bridge.ckt
+++ b/Devices/Bridge.ckt
@ -0,0 +1,14 @@
				@@ -0,0 +1,14 @@
+*Default Diode Bridge Rectifier
+*Connections:
+*              V- 
+*              | AC1
+*              | | V+
+*              | | | AC2
+*              | | | |
+.SUBCKT BRIDGE 1 2 3 4
+D1 1 2 DMOD
+D2 1 4 DMOD
+D3 2 3 DMOD
+D4 4 3 DMOD
+.MODEL DMOD D ()
+.ENDS BRIDGE
--- a/Devices/CAP.mdl
+++ b/Devices/CAP.mdl
@ -0,0 +1,2 @@
				@@ -0,0 +1,2 @@
+*Default semiconductor capacitor
+.MODEL CAP C()
--- a/Devices/DAC8.mdl
+++ b/Devices/DAC8.mdl
@ -0,0 +1,4 @@
				@@ -0,0 +1,4 @@
+* 8-Bit generic D/A converter
+* INPUTS VCC, GND, D7, D6, D5, D4, D3, D2, D1, D0, VRM, VRP;
+* OUTPUTS VCC_LD, D7_LD, D6_LD, D5_LD, D4_LD, D3_LD, D2_LD, D1_LD, D0_LD, VOUT;
+.MODEL DAC8 xsimcode(file="{MODEL_PATH}DAC8.scb" func=DAC8 {mntymx})
--- a/Devices/DIODE.mdl
+++ b/Devices/DIODE.mdl
@ -0,0 +1,3 @@
				@@ -0,0 +1,3 @@
+*Default Diode
+*Diode Pinout: A,K
+.MODEL DIODE D()
--- a/Devices/DIPSW2.ckt
+++ b/Devices/DIPSW2.ckt
@ -0,0 +1,19 @@
				@@ -0,0 +1,19 @@
+* DIP switch 2
+* jjt 19/6/2002: created
+*
+*             Switch connections:
+*             sw1
+*             |  |  sw2
+*             |  |  |  |
+*             |  |  |  |
+.subckt dpsw2 1  2  4  5
+ PARAMS: STATE1=0 STATE2=0 RON=1m ROFF=100E6
+*
+V1 3 0 {STATE1}
+V2 6 0 {STATE2}
+*
+SDIP1 1 2 3 0 DIPMOD
+SDIP2 4 5 6 0 DIPMOD
+*
+.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
+.ends dpsw2
--- a/Devices/DIPSW3.ckt
+++ b/Devices/DIPSW3.ckt
@ -0,0 +1,22 @@
				@@ -0,0 +1,22 @@
+* DIP switch 3
+* jjt 20/6/2002: created
+*
+*             Switch connections:
+*             sw1
+*             |  |  sw2
+*             |  |  |  |  sw3
+*             |  |  |  |  |  |
+*             |  |  |  |  |  |
+.subckt dpsw3 1  2  4  5  7  8 
+ PARAMS: STATE1=0 STATE2=0 STATE3=0 RON=1m ROFF=100E6
+*
+V1 3 0 {STATE1}
+V2 6 0 {STATE2}
+V3 9 0 {STATE3}
+*
+SDIP1 1 2 3 0 DIPMOD
+SDIP2 4 5 6 0 DIPMOD
+SDIP3 7 8 9 0 DIPMOD
+*
+.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
+.ends dpsw3
--- a/Devices/DIPSW4.ckt
+++ b/Devices/DIPSW4.ckt
@ -0,0 +1,25 @@
				@@ -0,0 +1,25 @@
+* DIP switch 4
+* jjt 20/6/2002: created
+*
+*             Switch connections:
+*             sw1
+*             |  |  sw2
+*             |  |  |  |  sw3
+*             |  |  |  |  |  |   sw4
+*             |  |  |  |  |  |  |   |
+*             |  |  |  |  |  |  |   |
+.subckt dpsw4 1  2  4  5  7  8  10  11
+ PARAMS: STATE1=0 STATE2=0 STATE3=0 STATE4=0 RON=1m ROFF=100E6
+*
+V1 3  0 {STATE1}
+V2 6  0 {STATE2}
+V3 9  0 {STATE3}
+V4 12 0 {STATE4}
+*
+SDIP1 1  2  3  0 DIPMOD
+SDIP2 4  5  6  0 DIPMOD
+SDIP3 7  8  9  0 DIPMOD
+SDIP4 10 11 12 0 DIPMOD
+*
+.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
+.ends dpsw4
--- a/Devices/DIPSW5.ckt
+++ b/Devices/DIPSW5.ckt
@ -0,0 +1,28 @@
				@@ -0,0 +1,28 @@
+* DIP switch 5
+* jjt 20/6/2002: created
+*
+*             Switch connections:
+*             sw1
+*             |  |  sw2
+*             |  |  |  |  sw3
+*             |  |  |  |  |  |   sw4
+*             |  |  |  |  |  |  |   |    sw5
+*             |  |  |  |  |  |  |   |   |   |
+*             |  |  |  |  |  |  |   |   |   |
+.subckt dpsw5 1  2  4  5  7  8  10  11  13  14
+ PARAMS: STATE1=0 STATE2=0 STATE3=0 STATE4=0 STATE5=0 RON=1m ROFF=100E6
+*
+V1 3  0 {STATE1}
+V2 6  0 {STATE2}
+V3 9  0 {STATE3}
+V4 12 0 {STATE4}
+V5 15 0 {STATE5}
+*
+SDIP1 1  2  3  0 DIPMOD
+SDIP2 4  5  6  0 DIPMOD
+SDIP3 7  8  9  0 DIPMOD
+SDIP4 10 11 12 0 DIPMOD
+SDIP5 13 14 15 0 DIPMOD
+*
+.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
+.ends dpsw5
--- a/Devices/DIPSW6.ckt
+++ b/Devices/DIPSW6.ckt
@ -0,0 +1,31 @@
				@@ -0,0 +1,31 @@
+* DIP switch 6
+* jjt 20/6/2002: created
+*
+*             Switch connections:
+*             sw1
+*             |  |  sw2
+*             |  |  |  |  sw3
+*             |  |  |  |  |  |   sw4
+*             |  |  |  |  |  |  |   |    sw5
+*             |  |  |  |  |  |  |   |   |   |    sw6
+*             |  |  |  |  |  |  |   |   |   |   |   |
+*             |  |  |  |  |  |  |   |   |   |   |   |
+.subckt dpsw6 1  2  4  5  7  8  10  11  13  14  16  17
+ PARAMS: STATE1=0 STATE2=0 STATE3=0 STATE4=0 STATE5=0 STATE6=0 RON=1m ROFF=100E6
+*
+V1 3  0 {STATE1}
+V2 6  0 {STATE2}
+V3 9  0 {STATE3}
+V4 12 0 {STATE4}
+V5 15 0 {STATE5}
+V6 18 0 {STATE6}
+*
+SDIP1 1  2  3  0 DIPMOD
+SDIP2 4  5  6  0 DIPMOD
+SDIP3 7  8  9  0 DIPMOD
+SDIP4 10 11 12 0 DIPMOD
+SDIP5 13 14 15 0 DIPMOD
+SDIP6 16 17 18 0 DIPMOD
+*
+.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
+.ends dpsw6
--- a/Devices/DIPSW7.ckt
+++ b/Devices/DIPSW7.ckt
@ -0,0 +1,34 @@
				@@ -0,0 +1,34 @@
+* DIP switch 7
+* jjt 20/6/2002: created
+*
+*             Switch connections:
+*             sw1
+*             |  |  sw2
+*             |  |  |  |  sw3
+*             |  |  |  |  |  |   sw4
+*             |  |  |  |  |  |  |   |    sw5
+*             |  |  |  |  |  |  |   |   |   |    sw6
+*             |  |  |  |  |  |  |   |   |   |   |   |    sw7
+*             |  |  |  |  |  |  |   |   |   |   |   |   |   |
+*             |  |  |  |  |  |  |   |   |   |   |   |   |   |
+.subckt dpsw7 1  2  4  5  7  8  10  11  13  14  16  17  19  20
+ PARAMS: STATE1=0 STATE2=0 STATE3=0 STATE4=0 STATE5=0 STATE6=0 STATE7=0 RON=1m ROFF=100E6
+*
+V1 3  0 {STATE1}
+V2 6  0 {STATE2}
+V3 9  0 {STATE3}
+V4 12 0 {STATE4}
+V5 15 0 {STATE5}
+V6 18 0 {STATE6}
+V7 21 0 {STATE7}
+*
+SDIP1 1  2  3  0 DIPMOD
+SDIP2 4  5  6  0 DIPMOD
+SDIP3 7  8  9  0 DIPMOD
+SDIP4 10 11 12 0 DIPMOD
+SDIP5 13 14 15 0 DIPMOD
+SDIP6 16 17 18 0 DIPMOD
+SDIP7 19 20 21 0 DIPMOD
+*
+.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
+.ends dpsw7
--- a/Devices/DIPSW8.ckt
+++ b/Devices/DIPSW8.ckt
@ -0,0 +1,37 @@
				@@ -0,0 +1,37 @@
+* DIP switch 8
+* jjt 20/6/2002: created
+*
+*             Switch connections:
+*             sw1
+*             |  |  sw2
+*             |  |  |  |  sw3
+*             |  |  |  |  |  |   sw4
+*             |  |  |  |  |  |  |   |    sw5
+*             |  |  |  |  |  |  |   |   |   |    sw6
+*             |  |  |  |  |  |  |   |   |   |   |   |    sw7
+*             |  |  |  |  |  |  |   |   |   |   |   |   |   |    sw8
+*             |  |  |  |  |  |  |   |   |   |   |   |   |   |   |   |
+*             |  |  |  |  |  |  |   |   |   |   |   |   |   |   |   |
+.subckt dpsw8 1  2  4  5  7  8  10  11  13  14  16  17  19  20  22  23
+ PARAMS: STATE1=0 STATE2=0 STATE3=0 STATE4=0 STATE5=0 STATE6=0 STATE7=0 STATE8=0 RON=1m ROFF=100E6
+*
+V1 3  0 {STATE1}
+V2 6  0 {STATE2}
+V3 9  0 {STATE3}
+V4 12 0 {STATE4}
+V5 15 0 {STATE5}
+V6 18 0 {STATE6}
+V7 21 0 {STATE7}
+V8 24 0 {STATE8}
+*
+SDIP1 1  2  3  0 DIPMOD
+SDIP2 4  5  6  0 DIPMOD
+SDIP3 7  8  9  0 DIPMOD
+SDIP4 10 11 12 0 DIPMOD
+SDIP5 13 14 15 0 DIPMOD
+SDIP6 16 17 18 0 DIPMOD
+SDIP7 19 20 21 0 DIPMOD
+SDIP8 22 23 24 0 DIPMOD
+*
+.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
+.ends dpsw8
--- a/Devices/DIPSW9.ckt
+++ b/Devices/DIPSW9.ckt
@ -0,0 +1,40 @@
				@@ -0,0 +1,40 @@
+* DIP switch 9
+* jjt 20/6/2002: created
+*
+*             Switch connections:
+*             sw1
+*             |  |  sw2
+*             |  |  |  |  sw3
+*             |  |  |  |  |  |   sw4
+*             |  |  |  |  |  |  |   |    sw5
+*             |  |  |  |  |  |  |   |   |   |    sw6
+*             |  |  |  |  |  |  |   |   |   |   |   |    sw7
+*             |  |  |  |  |  |  |   |   |   |   |   |   |   |    sw8
+*             |  |  |  |  |  |  |   |   |   |   |   |   |   |   |   |    sw9
+*             |  |  |  |  |  |  |   |   |   |   |   |   |   |   |   |   |   |
+*             |  |  |  |  |  |  |   |   |   |   |   |   |   |   |   |   |   |
+.subckt dpsw9 1  2  4  5  7  8  10  11  13  14  16  17  19  20  22  23  25  26
+PARAMS: STATE1=0 STATE2=0 STATE3=0 STATE4=0 STATE5=0 STATE6=0 STATE7=0 STATE8=0 STATE9=0 RON=1m ROFF=100E6
+*
+V1 3  0 {STATE1}
+V2 6  0 {STATE2}
+V3 9  0 {STATE3}
+V4 12 0 {STATE4}
+V5 15 0 {STATE5}
+V6 18 0 {STATE6}
+V7 21 0 {STATE7}
+V8 24 0 {STATE8}
+V9 27 0 {STATE9}
+*
+SDIP1 1  2  3  0 DIPMOD
+SDIP2 4  5  6  0 DIPMOD
+SDIP3 7  8  9  0 DIPMOD
+SDIP4 10 11 12 0 DIPMOD
+SDIP5 13 14 15 0 DIPMOD
+SDIP6 16 17 18 0 DIPMOD
+SDIP7 19 20 21 0 DIPMOD
+SDIP8 22 23 24 0 DIPMOD
+SDIP9 25 26 27 0 DIPMOD
+*
+.MODEL DIPMOD SW(VT=0.5 RON={RON} ROFF={ROFF})
+.ends dpsw9
--- a/Devices/DPDTRELAY.ckt
+++ b/Devices/DPDTRELAY.ckt
@ -0,0 +1,38 @@
				@@ -0,0 +1,38 @@
+*DPDT Relay Subcircuit Parameters
+*PULLIN     = Pull in voltage
+*DROPOFF    = Drop off voltage
+*CONTACT    = Contact resistance
+*RESISTANCE = Coil resistance
+*INDUCTANCE = Coil Inductance 
+* jjt 15/6/2002: extended existing SPDT model to DPDT.
+*
+*Generic DPDT Relay
+*Connections:     COM1
+*                 | NC1
+*                 | | NO1
+*                 | | | T1
+*                 | | | | T2
+*                 | | | | | COM2
+*                 | | | | | |  NC2
+*                 | | | | | |  |  NO2
+*                 | | | | | |  |  |
+*                 | | | | | |  |  |
+.SUBCKT DPDTRELAY 1 2 3 4 5 11 12 13
+ PARAMS: PULLIN=4 DROPOFF=0.1 CONTACT=1m RESISTANCE=500 INDUCTANCE=10m
+L1 4 6 {(INDUCTANCE/2)}
+L2 5 7 {(INDUCTANCE/2)}
+R1 6 7 {RESISTANCE}
+*
+BNO1 8 0 V={PULLIN}-abs(v(6,7))
+SW1 2 1 8 0 SWNC ON
+BNC1 9 0 V=abs(v(6,7))
+SW2 3 1 9 0 SWNO OFF
+*
+BNO2 15 0 V={PULLIN}-abs(v(6,7))
+SW3 12 11 15 0 SWNC ON
+BNC2 16 0 V=abs(v(6,7))
+SW4 13 11 16 0 SWNO OFF
+*
+.MODEL SWNC SW(VT={DROPOFF} RON={CONTACT} )
+.MODEL SWNO SW(VT={(PULLIN*0.98)} RON={CONTACT} )
+.ENDS DPDTRELAY
--- a/Devices/DPSTRELAY.ckt
+++ b/Devices/DPSTRELAY.ckt
@ -0,0 +1,33 @@
				@@ -0,0 +1,33 @@
+*DPST Relay Subcircuit Parameters
+*PULLIN     = Pull in voltage
+*DROPOFF    = Drop off voltage
+*CONTACT    = Contact resistance
+*RESISTANCE = Coil resistance
+*INDUCTANCE = Coil Inductance 
+* jjt 15/6/2002: changed DPDT model to DPST.
+*
+*Generic DPST Relay
+*Connections:     NO_A1
+*                 | NO_A2
+*                 | | NO_B1
+*                 | | | NO_B2
+*                 | | | |  T1
+*                 | | | |  | T2
+*                 | | | |  | |
+*                 | | | |  | |
+*                 | | | |  | |
+*                 | | | |  | |
+.SUBCKT DPSTRELAY 1 2 3 10 4 5
+ PARAMS: PULLIN=4 DROPOFF=0.1 CONTACT=1m RESISTANCE=500 INDUCTANCE=10m
+L1 4 6 {(INDUCTANCE/2)}
+L2 5 7 {(INDUCTANCE/2)}
+R1 6 7 {RESISTANCE}
+*
+BNO1 8 0 V={PULLIN}-abs(v(6,7))
+SW1 1 2 8 0 SWNO OFF
+*
+BNO2 9 0 V={PULLIN}-abs(v(6,7))
+SW2 3 10 9 0 SWNO OFF
+*
+.MODEL SWNO SW(VT={(PULLIN*0.98)} RON={CONTACT} )
+.ENDS DPSTRELAY
--- a/Devices/DTUNNEL1.ckt
+++ b/Devices/DTUNNEL1.ckt
@ -0,0 +1,16 @@
				@@ -0,0 +1,16 @@
+*Tunnel Diode Default
+*MCE 600V 50A 27.2ns default parameters
+*Diode Pinout: A,K
+* Parameters:
+* RS:  Series resistance value
+* RP:  Negative resistance value in parallel with capacitance. 
+* CP:   Capacitance value in parallel with negative resistance.
+* LS:  Series inductance value.
+*
+*
+.SUBCKT DTUNNEL1 1 2 PARAMS: Rs=6 Rp=-75 Cp=0.6E-12 Ls=0.1nH
+RS  1 3  {Rs}
+RP  3 4  {Rp}
+CP  3 4  {Cp}
+LS  4 2  {Ls}
+.ENDS DTUNNEL1
--- a/Devices/DTUNNEL2.ckt
+++ b/Devices/DTUNNEL2.ckt
@ -0,0 +1,9 @@
				@@ -0,0 +1,9 @@
+* Generic tunnel diode. Written 30/11/2001.
+*
+.SUBCKT DTUNNEL2 1 2 PARAMS: Vp=60mV Ip=5mA Vv=0.3V Iv=0.3mA Vpp=500mV Vt=26mV
+
+BTHE  1 2 I = {Ip}*exp(-{Vpp}/{Vt})*(exp(v(1,2)/{vt})-1)
+BTUN  1 2 I = {Ip}*(v(1,2)/{Vp})*exp(1-v(1,2)/{Vp})
+BEXC  1 2 I = {Iv}*exp(v(1,2)-{Vv})
+
+.ENDS DTUNNEL2
--- a/Devices/FUSE.ckt
+++ b/Devices/FUSE.ckt
@ -0,0 +1,9 @@
				@@ -0,0 +1,9 @@
+*FUSE:Fuse Subcircuit Parameters
+*CURRENT    = Fuse current
+*RESISTANCE = Internal resistance
+
+.SUBCKT FUSE 1 2 PARAMS: CURRENT=1 RESISTANCE=1m
+SW1 1 2 3 0 SMOD OFF
+BNLV 3 0 V=(abs(v(1,2)))
+.MODEL SMOD SW (VT={(CURRENT*RESISTANCE)} RON=1g ROFF={RESISTANCE})
+.ENDS FUSE
--- a/Devices/HDSP_501B.ckt
+++ b/Devices/HDSP_501B.ckt
@ -0,0 +1,50 @@
				@@ -0,0 +1,50 @@
+*  
+* Diode Model Produced by Altium Ltd  
+* Date:  4-May-2004 
+*  
+* Manufacturer: Renesas  
+* Component Name: HDSP-501B  
+*  
+* Parameters derived from information available in data sheet.  
+*
+*                 cathode-e
+*                 |  cathode-d
+*                 |  |  common-anode
+*                 |  |  |  cathode-c
+*                 |  |  |  |  cathode-DP
+*                 |  |  |  |  |  cathode-b
+*                 |  |  |  |  |  |  cathode-a
+*                 |  |  |  |  |  |  |  common-anode
+*                 |  |  |  |  |  |  |  |  cathode-f
+*                 |  |  |  |  |  |  |  |  |  cathode-g
+*                 |  |  |  |  |  |  |  |  |  |  
+.SUBCKT HDSP_501B 1  2  3  4  5  6  7  8  9  10
+
+DA1  3  7  dHDSP_501B
+DB1  3  6  dHDSP_501B
+DC1  3  4  dHDSP_501B
+DD1  3  2  dHDSP_501B
+DE1  3  1  dHDSP_501B
+DF1  3  9  dHDSP_501B
+DG1  3 10  dHDSP_501B
+DDP1 3  5  dHDSP_501B
+
+DA2  8  7  dHDSP_501B
+DB2  8  6  dHDSP_501B
+DC2  8  4  dHDSP_501B
+DD2  8  2  dHDSP_501B
+DE2  8  1  dHDSP_501B
+DF2  8  9  dHDSP_501B
+DG2  8 10  dHDSP_501B
+DDP2 8  5  dHDSP_501B
+
+.MODEL dHDSP_501B D
+ (  
+    IS = 2.15137703E-17 
+    N  = 4.02940472 
+    RS = 16.32357710 
+    BV = 4.50000000 
+    IBV = 100u 
+ )  
+
+.ENDS HDSP_501B
--- a/Devices/HDSP_503B.ckt
+++ b/Devices/HDSP_503B.ckt
@ -0,0 +1,50 @@
				@@ -0,0 +1,50 @@
+*  
+* Diode Model Produced by Altium Ltd  
+* Date:  4-May-2004 
+*  
+* Manufacturer: Renesas  
+* Component Name: HDSP-503B  
+*  
+* Parameters derived from information available in data sheet.  
+*
+*                 anode-e
+*                 |  anode-d
+*                 |  |  common-cathode
+*                 |  |  |  anode-c
+*                 |  |  |  |  anode-DP
+*                 |  |  |  |  |  anode-b
+*                 |  |  |  |  |  |  anode-a
+*                 |  |  |  |  |  |  |  common-cathode
+*                 |  |  |  |  |  |  |  |  anode-f
+*                 |  |  |  |  |  |  |  |  |  anode-g
+*                 |  |  |  |  |  |  |  |  |  |  
+.SUBCKT HDSP_503B 1  2  3  4  5  6  7  8  9  10
+
+DA1   7  3  dHDSP_503B
+DB1   6  3  dHDSP_503B
+DC1   4  3  dHDSP_503B
+DD1   2  3  dHDSP_503B
+DE1   1  3  dHDSP_503B
+DF1   9  3  dHDSP_503B
+DG1  10  3  dHDSP_503B
+DDP1  5  3  dHDSP_503B
+
+DA2   7  8  dHDSP_503B
+DB2   6  8  dHDSP_503B
+DC2   4  8  dHDSP_503B
+DD2   2  8  dHDSP_503B
+DE2   1  8  dHDSP_503B
+DF2   9  8  dHDSP_503B
+DG2  10  8  dHDSP_503B
+DDP2  5  8  dHDSP_503B
+
+.MODEL dHDSP_503B D
+ (  
+    IS = 2.15137703E-17 
+    N  = 4.02940472 
+    RS = 16.32357710 
+    BV = 4.50000000 
+    IBV = 100u 
+ )  
+
+.ENDS HDSP_503B
--- a/Devices/HDSP_7401.ckt
+++ b/Devices/HDSP_7401.ckt
@ -0,0 +1,50 @@
				@@ -0,0 +1,50 @@
+*  
+* Diode Model Produced by Altium Ltd  
+* Date:  3-May-2004 
+*  
+* Manufacturer: Renesas  
+* Component Name: HDSP-7401  
+*  
+* Parameters derived from information available in data sheet.  
+* 
+*                 common-anode
+*                 |  cathode-f
+*                 |  |  cathode-g
+*                 |  |  |  cathode-e
+*                 |  |  |  |  cathode-d
+*                 |  |  |  |  |  common-anode
+*                 |  |  |  |  |  |  cathode-DP
+*                 |  |  |  |  |  |  |  cathode-c
+*                 |  |  |  |  |  |  |  |  cathode-b
+*                 |  |  |  |  |  |  |  |  |  cathode-a
+*                 |  |  |  |  |  |  |  |  |  |
+.SUBCKT HDSP_7401 1  2  3  4  5  6  7  8  9  10
+
+DA1  1  10  dHDSP_7401
+DB1  1   9  dHDSP_7401
+DC1  1   8  dHDSP_7401
+DD1  1   5  dHDSP_7401
+DE1  1   4  dHDSP_7401
+DF1  1   2  dHDSP_7401
+DG1  1   3  dHDSP_7401
+DDP1 1   7  dHDSP_7401
+
+DA2  6  10  dHDSP_7401
+DB2  6   9  dHDSP_7401
+DC2  6   8  dHDSP_7401
+DD2  6   5  dHDSP_7401
+DE2  6   4  dHDSP_7401
+DF2  6   2  dHDSP_7401
+DG2  6   3  dHDSP_7401
+DDP2 6   7  dHDSP_7401
+
+.MODEL dHDSP_7401 D
+ (  
+    IS = 2.77296438E-23 
+    N  = 1.39205436 
+    RS = 25.13253104 
+    BV = 45.00000000 
+    IBV = 100u 
+ )  
+
+.ENDS HDSP_7401
--- a/Devices/HDSP_7403.ckt
+++ b/Devices/HDSP_7403.ckt
@ -0,0 +1,50 @@
				@@ -0,0 +1,50 @@
+*  
+* Diode Model Produced by Altium Ltd  
+* Date:  3-May-2004 
+*  
+* Manufacturer: Renesas  
+* Component Name: HDSP-7403  
+*  
+* Parameters derived from information available in data sheet.  
+* 
+*                 common-cathode
+*                 |  anode-f
+*                 |  |  anode-g
+*                 |  |  |  anode-e
+*                 |  |  |  |  anode-d
+*                 |  |  |  |  |  common-cathode
+*                 |  |  |  |  |  |  anode-DP
+*                 |  |  |  |  |  |  |  anode-c
+*                 |  |  |  |  |  |  |  |  anode-b
+*                 |  |  |  |  |  |  |  |  |  anode-a
+*                 |  |  |  |  |  |  |  |  |  |
+.SUBCKT HDSP_7403 1  2  3  4  5  6  7  8  9  10
+
+DA1  10  1  dHDSP_7403
+DB1   9  1  dHDSP_7403
+DC1   8  1  dHDSP_7403
+DD1   5  1  dHDSP_7403
+DE1   4  1  dHDSP_7403
+DF1   2  1  dHDSP_7403
+DG1   3  1  dHDSP_7403
+DDP1  7  1  dHDSP_7403
+
+DA2  10  6  dHDSP_7403
+DB2   9  6  dHDSP_7403
+DC2   8  6  dHDSP_7403
+DD2   5  6  dHDSP_7403
+DE2   4  6  dHDSP_7403
+DF2   2  6  dHDSP_7403
+DG2   3  6  dHDSP_7403
+DDP2  7  6  dHDSP_7403
+
+.MODEL dHDSP_7403 D
+ (  
+    IS = 2.77296438E-23 
+    N  = 1.39205436 
+    RS = 25.13253104 
+    BV = 45.00000000 
+    IBV = 100u 
+ )  
+
+.ENDS HDSP_7403
--- a/Devices/HDSP_A211.ckt
+++ b/Devices/HDSP_A211.ckt
@ -0,0 +1,50 @@
				@@ -0,0 +1,50 @@
+*  
+* Diode Model Produced by Altium Ltd  
+* Date:  10-Mar-2004 
+*  
+* Manufacturer: Agilent  
+* Component Name: HDSP-A211  
+*  
+* Parameters derived from information available in data sheet.  
+*
+*                 common-anode
+*                 |  cathode-f
+*                 |  |  cathode-g
+*                 |  |  |  cathode-e
+*                 |  |  |  |  cathode-d
+*                 |  |  |  |  |  common-anode
+*                 |  |  |  |  |  |  cathode-DP
+*                 |  |  |  |  |  |  |  cathode-c
+*                 |  |  |  |  |  |  |  |  cathode-b
+*                 |  |  |  |  |  |  |  |  |  cathode-a
+*                 |  |  |  |  |  |  |  |  |  |
+.SUBCKT HDSP_A211 1  2  3  4  5  6  7  8  9  10
+
+DA1  1  10 dHDSP_A211
+DB1  1   9 dHDSP_A211
+DC1  1   8 dHDSP_A211
+DD1  1   5 dHDSP_A211
+DE1  1   4 dHDSP_A211
+DF1  1   2 dHDSP_A211
+DG1  1   3 dHDSP_A211
+DDP1 1   7 dHDSP_A211
+
+DA2  6  10 dHDSP_A211
+DB2  6   9 dHDSP_A211
+DC2  6   8 dHDSP_A211
+DD2  6   5 dHDSP_A211
+DE2  6   4 dHDSP_A211
+DF2  6   2 dHDSP_A211
+DG2  6   3 dHDSP_A211
+DDP2 6   7 dHDSP_A211
+
+.MODEL dHDSP_A211 D
+ (  
+     IS = 2.92097419E-52 
+      N = 0.52799867 
+     RS = 25.27044243 
+     BV = 30
+    IBV = 100u 
+ )  
+
+.ENDS HDSP_A211
--- a/Devices/HDSP_A213.ckt
+++ b/Devices/HDSP_A213.ckt
@ -0,0 +1,50 @@
				@@ -0,0 +1,50 @@
+*  
+* Diode Model Produced by Altium Ltd  
+* Date:  10-Mar-2004 
+*  
+* Manufacturer: Agilent  
+* Component Name: HDSP-A213  
+*  
+* Parameters derived from information available in data sheet.  
+*
+*                 common-anode
+*                 |  kathode-f
+*                 |  |  kathode-g
+*                 |  |  |  kathode-e
+*                 |  |  |  |  kathode-d
+*                 |  |  |  |  |  common-anode
+*                 |  |  |  |  |  |  kathode-DP
+*                 |  |  |  |  |  |  |  kathode-c
+*                 |  |  |  |  |  |  |  |  kathode-b
+*                 |  |  |  |  |  |  |  |  |  kathode-a
+*                 |  |  |  |  |  |  |  |  |  |
+.SUBCKT HDSP_A213 1  2  3  4  5  6  7  8  9  10
+
+DA1  10  1 dHDSP_A213
+DB1   9  1 dHDSP_A213
+DC1   8  1 dHDSP_A213
+DD1   5  1 dHDSP_A213
+DE1   4  1 dHDSP_A213
+DF1   2  1 dHDSP_A213
+DG1   3  1 dHDSP_A213
+DDP1  7  1 dHDSP_A213
+
+DA2  10  6 dHDSP_A213
+DB2   9  6 dHDSP_A213
+DC2   8  6 dHDSP_A213
+DD2   5  6 dHDSP_A213
+DE2   4  6 dHDSP_A213
+DF2   2  6 dHDSP_A213
+DG2   3  6 dHDSP_A213
+DDP2  7  6 dHDSP_A213
+
+.MODEL dHDSP_A213 D
+ (  
+     IS = 2.92097419E-52 
+      N = 0.52799867 
+     RS = 25.27044243 
+     BV = 30
+    IBV = 100u 
+ )  
+
+.ENDS HDSP_A213
--- a/Devices/HDSP_A27C.ckt
+++ b/Devices/HDSP_A27C.ckt
@ -0,0 +1,71 @@
				@@ -0,0 +1,71 @@
+*  
+* Diode Model Produced by Altium Ltd  
+* Date:  11-Mar-2004 
+*  
+* Manufacturer: Agilent  
+* Component Name: HDSP-A27C  
+*  
+* Parameters derived from information available in data sheet.  
+* 
+*                 1E/2E anode  
+*                 |  1M/2M anode  
+*                 |  |  1L/2L anode
+*                 |  |  |  1K/2K anode
+*                 |  |  |  |  1J/2J anode
+*                 |  |  |  |  |  1D/2D anode
+*                 |  |  |  |  |  |  DP1 anode
+*                 |  |  |  |  |  |  |  1C/2C anode
+*                 |  |  |  |  |  |  |  |  1B/2B anode
+*                 |  |  |  |  |  |  |  |  |  DIGIT No. 2 Common cathode
+*                 |  |  |  |  |  |  |  |  |  |  1A/2A anode
+*                 |  |  |  |  |  |  |  |  |  |  |  1N/2N anode
+*                 |  |  |  |  |  |  |  |  |  |  |  |  1H/2H anode
+*                 |  |  |  |  |  |  |  |  |  |  |  |  |  1G/2G anode
+*                 |  |  |  |  |  |  |  |  |  |  |  |  |  |  DIGIT No. 1 Common cathode
+*                 |  |  |  |  |  |  |  |  |  |  |  |  |  |  |  1P/2P anode
+*                 |  |  |  |  |  |  |  |  |  |  |  |  |  |  |  |  1F/2F anode
+*                 |  |  |  |  |  |  |  |  |  |  |  |  |  |  |  |  |
+.SUBCKT HDSP_A27C 1  2  4  5  6  7  8  9  10 11 12 13 14 15 16 17 18
+
+DA1  12  16  dHDSP_A27C
+DB1  10  16  dHDSP_A27C
+DC1   9  16  dHDSP_A27C
+DD1   7  16  dHDSP_A27C
+DE1   1  16  dHDSP_A27C
+DF1  18  16  dHDSP_A27C
+DG1  15  16  dHDSP_A27C
+DH1  14  16  dHDSP_A27C
+DJ1   6  16  dHDSP_A27C
+DK1   5  16  dHDSP_A27C
+DL1   4  16  dHDSP_A27C
+DM1   2  16  dHDSP_A27C
+DN1  13  16  dHDSP_A27C
+DP1  17  16  dHDSP_A27C
+DDP1  8  16  dHDSP_A27C
+
+DA2  12  11  dHDSP_A27C
+DB2  10  11  dHDSP_A27C
+DC2   9  11  dHDSP_A27C
+DD2   7  11  dHDSP_A27C
+DE2   1  11  dHDSP_A27C
+DF2  18  11  dHDSP_A27C
+DG2  15  11  dHDSP_A27C
+DH2  14  11  dHDSP_A27C
+DJ2   6  11  dHDSP_A27C
+DK2   5  11  dHDSP_A27C
+DL2   4  11  dHDSP_A27C
+DM2   2  11  dHDSP_A27C
+DN2  13  11  dHDSP_A27C
+DP2  17  11  dHDSP_A27C
+DDP2  8  11  dHDSP_A27C
+
+.MODEL dHDSP_A27C D
+ (  
+    IS = 2.34165185E-18 
+     N = 1.64080796 
+    RS = 5.35791037 
+    BV = 4.5
+   IBV = 100u
+ )  
+
+.ENDS HDSP_A27C
--- a/Devices/HDSP_A511.ckt
+++ b/Devices/HDSP_A511.ckt
@ -0,0 +1,50 @@
				@@ -0,0 +1,50 @@
+*  
+* Diode Model Produced by Altium Ltd  
+* Date:  10-Mar-2004 
+*  
+* Manufacturer: Agilent  
+* Component Name: HDSP-A511  
+*  
+* Parameters derived from information available in data sheet.  
+*
+*                 common-anode
+*                 |  cathode-f
+*                 |  |  cathode-g
+*                 |  |  |  cathode-e
+*                 |  |  |  |  cathode-d
+*                 |  |  |  |  |  common-anode
+*                 |  |  |  |  |  |  cathode-DP
+*                 |  |  |  |  |  |  |  cathode-c
+*                 |  |  |  |  |  |  |  |  cathode-b
+*                 |  |  |  |  |  |  |  |  |  cathode-a
+*                 |  |  |  |  |  |  |  |  |  |
+.SUBCKT HDSP_A511 1  2  3  4  5  6  7  8  9  10
+
+DA1  1  10 dHDSP_A511
+DB1  1   9 dHDSP_A511
+DC1  1   8 dHDSP_A511
+DD1  1   5 dHDSP_A511
+DE1  1   4 dHDSP_A511
+DF1  1   2 dHDSP_A511
+DG1  1   3 dHDSP_A511
+DDP1 1   7 dHDSP_A511
+
+DA2  6  10 dHDSP_A511
+DB2  6   9 dHDSP_A511
+DC2  6   8 dHDSP_A511
+DD2  6   5 dHDSP_A511
+DE2  6   4 dHDSP_A511
+DF2  6   2 dHDSP_A511
+DG2  6   3 dHDSP_A511
+DDP2 6   7 dHDSP_A511
+
+.MODEL dHDSP_A511 D
+ (  
+     IS = 1.61114016E-27 
+      N = 1.30291189 
+     RS = 12.83456794 
+     BV = 50 
+    IBV = 100u 
+ )   
+
+.ENDS HDSP_A511
--- a/Devices/HDSP_A513.ckt
+++ b/Devices/HDSP_A513.ckt
@ -0,0 +1,50 @@
				@@ -0,0 +1,50 @@
+*  
+* Diode Model Produced by Altium Ltd  
+* Date:  10-Mar-2004 
+*  
+* Manufacturer: Agilent  
+* Component Name: HDSP-A513  
+*  
+* Parameters derived from information available in data sheet.  
+*
+*                 common-cathode
+*                 |  anode-f
+*                 |  |  anode-g
+*                 |  |  |  anode-e
+*                 |  |  |  |  anode-d
+*                 |  |  |  |  |  common-cathode
+*                 |  |  |  |  |  |  anode-DP
+*                 |  |  |  |  |  |  |  anode-c
+*                 |  |  |  |  |  |  |  |  anode-b
+*                 |  |  |  |  |  |  |  |  |  anode-a
+*                 |  |  |  |  |  |  |  |  |  |
+.SUBCKT HDSP_A513 1  2  3  4  5  6  7  8  9  10
+
+DA1  10  1 dHDSP_A513
+DB1   9  1 dHDSP_A513
+DC1   8  1 dHDSP_A513
+DD1   5  1 dHDSP_A513
+DE1   4  1 dHDSP_A513
+DF1   2  1 dHDSP_A513
+DG1   3  1 dHDSP_A513
+DDP1  7  1 dHDSP_A513
+
+DA2  10  6 dHDSP_A513
+DB2   9  6 dHDSP_A513
+DC2   8  6 dHDSP_A513
+DD2   5  6 dHDSP_A513
+DE2   4  6 dHDSP_A513
+DF2   2  6 dHDSP_A513
+DG2   3  6 dHDSP_A513
+DDP2  7  6 dHDSP_A513
+
+.MODEL dHDSP_A513 D
+ (  
+     IS = 1.61114016E-27 
+      N = 1.30291189 
+     RS = 12.83456794 
+     BV = 50 
+    IBV = 100u 
+ )   
+
+.ENDS HDSP_A513
--- a/Devices/IDEAL3W.ckt
+++ b/Devices/IDEAL3W.ckt
@ -0,0 +1,21 @@
				@@ -0,0 +1,21 @@
+* Ideal Transformer Subcircuit Parameters
+* RATIO1 = turns ratio (= secondary1/primary)
+* RATIO2 = turns ratio (= secondary2/primary)
+*
+* Ideal Transformer with three windings
+* jjt 18/12/00: created using IDEAL4W (created by dw, 18/12/2000) as a template.
+* Connections:
+*               Pri+
+*               | Pri-
+*               | | Sec1+
+*               | | | Sec1-
+*               | | | | Sec2+
+*               | | | | | Sec2-
+*               | | | | | |
+*               | | | | | |
+*               | | | | | |
+.SUBCKT IDEAL3W 1 2 3 4 5 6 PARAMS: RATIO1=1 RATIO2=1
+BP  1 2 I=( -I(BS1)*{RATIO1} - I(BS2)*{RATIO2} )
+BS1 3 4 V=( V(1,2)*{RATIO1} )
+BS2 5 6 V=( V(1,2)*{RATIO2} )
+.ENDS IDEAL3W
--- a/Devices/IDEAL4W.ckt
+++ b/Devices/IDEAL4W.ckt
@ -0,0 +1,23 @@
				@@ -0,0 +1,23 @@
+*Ideal Transformer Subcircuit Parameters
+*RATIO1 = turns ratio (= secondary1/primary)
+*RATIO2 = turns ratio (= secondary2/primary)
+*RATIO3 = turns ratio (= secondary3/primary)
+*
+*Ideal Transformer with four windings
+*dw 18/12/00: created
+*Connections:
+*               Pri+
+*               | Pri-
+*               | | Sec1+
+*               | | | Sec1-
+*               | | | | Sec2+
+*               | | | | | Sec2-
+*               | | | | | | Sec3+
+*               | | | | | | | Sec3-
+*               | | | | | | | |
+.SUBCKT IDEAL4W 1 2 3 4 5 6 7 8 PARAMS: RATIO1=1 RATIO2=1 RATIO3=1
+BP  1 2 I=( -I(BS1)*{RATIO1} - I(BS2)*{RATIO2} - I(BS3)*{RATIO3} )
+BS1 3 4 V=( V(1,2)*{RATIO1} )
+BS2 5 6 V=( V(1,2)*{RATIO2} )
+BS3 7 8 V=( V(1,2)*{RATIO3} )
+.ENDS IDEAL4W
--- a/Devices/IDEALTRANS.ckt
+++ b/Devices/IDEALTRANS.ckt
@ -0,0 +1,15 @@
				@@ -0,0 +1,15 @@
+*Ideal Transformer Subcircuit Parameters
+*RATIO = turns ratio (= secondary/primary)
+*
+*Ideal Transformer
+*dw 6/8/99: created
+*Connections:
+*                  Pri+
+*                  | Pri-
+*                  | | Sec+
+*                  | | | Sec-
+*                  | | | |
+.SUBCKT IDEALTRANS 1 2 3 4 PARAMS: RATIO=1
+BP  1 2 I=( -I(BS)*{RATIO} )
+BS  3 4 V=( V(1,2)*{RATIO} )
+.ENDS IDEALTRANS
--- a/Devices/IDEALTRANSCT.ckt
+++ b/Devices/IDEALTRANSCT.ckt
@ -0,0 +1,19 @@
				@@ -0,0 +1,19 @@
+*Ideal Centre-Tapped Transformer Subcircuit Parameters
+*NP = Number of turns on the primary coil
+*NS1 = Number of turns on the first secondary coil
+*NS2 = Number of turns on the second secondary coil
+*
+*dw 6/8/99: created
+*
+*Connections:
+*                    Pri+
+*                    | Pri-
+*                    | | Sec+
+*                    | | | SecCT
+*                    | | | | Sec-
+*                    | | | | |
+.SUBCKT IDEALTRANSCT 1 2 3 4 5 PARAMS: NP=1 NS1=1 NS2=1
+BP  1 2 I=( (-I(BS1)*{NS1} -I(BS2)*{NS2})/{NP} )
+BS1 3 4 V=( V(1,2)*{NS1}/{NP} )
+BS2 4 5 V=( V(1,2)*{NS2}/{NP} )
+.ENDS IDEALTRANSCT
--- a/Devices/IRF1010.ckt
+++ b/Devices/IRF1010.ckt
@ -0,0 +1,25 @@
				@@ -0,0 +1,25 @@
+*IRF1010 MCE 4-2-96
+*55V  75A .014 ohm HEXFET pkg:TO-220 2,1,3
+.SUBCKT IRF1010  10 20 40 40
+M1   1  2  3  3  DMOS L=1U W=1U
+RD  10  1  5.65M
+RS  30  3  1.35M
+RG  20  2  12.1
+CGS  2  3  2.15N
+EGD 12  0  2  1  1
+VFB 14  0  0
+FFB  2  1  VFB  1
+CGD 13 14  4.49N
+R1  13  0  1
+D1  12 13  DLIM
+DDG 15 14  DCGD
+R2  12 15  1
+D2  15  0  DLIM
+DSD  3 10  DSUB
+LS  30 40  7.5N
+.MODEL DMOS NMOS (LEVEL=3 THETA=60M VMAX=114K ETA=2M VTO=3 KP=19.4)
+.MODEL DCGD D (CJO=4.49N VJ=.6 M=.68)
+.MODEL DSUB D (IS=311N N=1.5 RS=8.67M BV=55 CJO=4.08N VJ=.8 M=.42 TT=100N)
+.MODEL DLIM D (IS=100U)
+.ENDS IRF1010
+
--- a/Devices/IRF9510.ckt
+++ b/Devices/IRF9510.ckt
@ -0,0 +1,25 @@
				@@ -0,0 +1,25 @@
+*IRF9510  MCE  4-2-96
+*100V  4A  1.2 ohms HEXFET pkg:TO-220 2,1,3
+.SUBCKT IRF9510  10 20 40 40
+M1   1  2  3  3  DMOS L=1U W=1U
+RD  10  1  .569
+RS  30  3  31M
+RG  20  2  37.5
+CGS  2  3  182P
+EGD 12  0  1  2  1
+VFB 14  0  0
+FFB  1  2  VFB  1
+CGD 13 14  231P
+R1  13  0  1
+D1  12 13  DLIM
+DDG 15 14  DCGD
+R2  12 15  1
+D2  15  0  DLIM
+DSD 10  3  DSUB
+LS  30 40  7.5N
+.MODEL DMOS PMOS (LEVEL=3 THETA=60M VMAX=208K ETA=2M VTO=-3 KP=.471)
+.MODEL DCGD D (CJO=231P VJ=.6 M=.68)
+.MODEL DSUB D (IS=16.6N N=1.5 RS=1.18 BV=100 CJO=327P VJ=.8 M=.42 TT=82N)
+.MODEL DLIM D (IS=100U)
+.ENDS IRF9510
+
--- a/Devices/IRGPC40U.ckt
+++ b/Devices/IRGPC40U.ckt
@ -0,0 +1,36 @@
				@@ -0,0 +1,36 @@
+*IRGPC40U  MCE  C G E  7-13-95
+*600V 40A 24.3ns pkg:TO-247 2,1,3
+.SUBCKT IRGPC40U 71 72 74
+Q1  83 81 85     QOUT
+M1  81 82 83 83  MFIN L=1U W=1U
+DSD 83 81  DO
+DBE 85 81  DE
+RC  85 71  21.1M
+RE  83 73  2.11M
+RG  72 82  25.5
+CGE 82 83  1.42N
+CGC 82 71  1P
+EGD 91  0 82 81  1
+VFB 93  0  0
+FFB 82 81  VFB  1
+CGD 92 93  1.41N
+R1  92  0  1
+D1  91 92  DLIM
+DHV 94 93  DR
+R2  91 94  1
+D2  94  0  DLIM
+LE  73 74  7.5N
+DLV 94 95  DR 13
+RLV 95  0  1
+ESD 96 93  POLY(1) 83 81  19  1
+MLV 95 96 93 93  SW
+.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
+.MODEL QOUT PNP (IS=377F NF=1.2 BF=5.1 CJE=3.48N TF=24.3N XTB=1.3)
+.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=2.12)
+.MODEL DR D (IS=37.7F CJO=100P VJ=1 M=.82)
+.MODEL DO D (IS=37.7F BV=600 CJO=2.07N VJ=1 M=.7)
+.MODEL DE D (IS=37.7F BV=14.3 N=2)
+.MODEL DLIM D (IS=100N)
+.ENDS IRGPC40U 
+
+
--- a/Devices/LED0.mdl
+++ b/Devices/LED0.mdl
@ -0,0 +1,4 @@
				@@ -0,0 +1,4 @@
+*Typ INFRARED GaAs LED: Vf=1.2V Vr=5V If=40mA trr=3uS
+*LED Pinout: 1=A, 2=K
+.MODEL LED0 D (IS=93.5P RS=84M N=2.63 BV=5 IBV=10U
+ CJO=2.97P VJ=.75 M=.333 TT=4.32U)
--- a/Devices/LED1.mdl
+++ b/Devices/LED1.mdl
@ -0,0 +1,4 @@
				@@ -0,0 +1,4 @@
+*Typ RED GaAs LED: Vf=1.7V Vr=4V If=40mA trr=3uS
+*LED Pinout: 1=A, 2=K
+.MODEL LED1 D (IS=93.2P RS=42M N=3.73 BV=4 IBV=10U
+ CJO=2.97P VJ=.75 M=.333 TT=4.32U)
--- a/Devices/LED2.mdl
+++ b/Devices/LED2.mdl
@ -0,0 +1,4 @@
				@@ -0,0 +1,4 @@
+*Typ RED,GREEN,YELLOW,AMBER GaAs LED: Vf=2.1V Vr=4V If=40mA trr=3uS
+*LED Pinout: 1=A, 2=K
+.MODEL LED2 D (IS=93.1P RS=42M N=4.61 BV=4 IBV=10U
+ CJO=2.97P VJ=.75 M=.333 TT=4.32U)
--- a/Devices/LED3.mdl
+++ b/Devices/LED3.mdl
@ -0,0 +1,4 @@
				@@ -0,0 +1,4 @@
+*Typ BLUE SiC LED: Vf=3.4V Vr=5V If=40mA trr=3uS
+*LED Pinout: 1=A, 2=K
+.MODEL LED3 D (IS=93.1P RS=42M N=7.47 BV=5 IBV=30U
+ CJO=2.97P VJ=.75 M=.333 TT=4.32U)
--- a/Devices/MAC15A8.ckt
+++ b/Devices/MAC15A8.ckt
@ -0,0 +1,29 @@
				@@ -0,0 +1,29 @@
+*MAC15A8 MCE 2-27-96
+*600V 15A pkg:TO-220 2,3,1
+.SUBCKT MAC15A8   1  2  3
+*     TERMINALS: MT2 G MT1
+QN1  5 4 3  NOUT OFF
+QN2 11 6 7  NOUT OFF
+QP1 6 11 3  POUT OFF
+QP2  4 5 7  POUT OFF
+DF  4  5  DZ OFF
+DR  6 11  DZ OFF
+RF  4 6  60MEG
+RT2 1 7  18.8M
+RH  7 6  87.5
+RGP 8 3  23.1
+RG  2 8  11.5
+RS  8 4  102
+DN  9 2  DIN OFF
+RN  9 3  41.6
+GNN  6 7 9 3 15.2M
+GNP  4 5 9 3 18.1M
+DP 2 10  DIP OFF
+RP 10 3  29.5
+GP  7 6 10 3 10.3M
+.MODEL DIN  D (IS=45.8F)
+.MODEL DIP  D (IS=45.8F N=1.2)
+.MODEL DZ   D (IS=45.8F N=1.5 IBV=10U BV=600)
+.MODEL POUT PNP (IS=45.8F BF=5 CJE=4.02N TF=38.2U)
+.MODEL NOUT NPN (IS=45.8F BF=20 CJE=4.02N CJC=804P TF=2.55U)
+.ENDS MAC15A8
--- a/Devices/Miscellaneous
+++ b/Devices/Miscellaneous
--- a/Devices/Miscellaneous
+++ b/Devices/Miscellaneous
--- a/Devices/Miscellaneous
+++ b/Devices/Miscellaneous
--- a/Devices/NI3WTRANS.ckt
+++ b/Devices/NI3WTRANS.ckt
@ -0,0 +1,45 @@
				@@ -0,0 +1,45 @@
+*Transformer Subcircuit Parameters
+*RATIO1 = Turns ratio= Secondary1/Primary
+*RATIO2 = Turns ratio= Secondary2/Primary
+*RPRI   = Primary DC resistance
+*R2D    = Secondary1 leakage resistance referred to the primary side
+*R3D    = Secondary2 leakage resistance referred to the primary side
+*L1     = Primary Leakage inductance
+*XM     = Magnetizing Reactance
+*RCORE  = Core Loss Resistance
+*X2D   = Secondary1 Leakage Reactance referred to the primary side
+*X3D   = Secondary2 Leakage Reactance referred to the primary side
+
+*Non-ideal 4-winding Transformer
+*jjt created 18/1/2001.
+*jjt 18/1/2002: changed LX2D,LX3D comments to match subcircuit parameters (X2D, X3D) to avoid possible confusion.
+*Connections:
+*                 Pri+
+*                 |   Pri-
+*                 |   |   Sec1+
+*                 |   |   |   Sec1-
+*                 |   |   |   |   Sec2+
+*                 |   |   |   |   |   Sec2-
+*                 |   |   |   |   |   |   
+*                 |   |   |   |   |   |   
+*                 |   |   |   |   |   |   
+*                 |   |   |   |   |   |   
+.SUBCKT NI3WTRANS 1   2   3   4   5   6      PARAMS: RATIO1=1 RATIO2=1 RPRI=0.1 R2D=0.1 R3D=0.1 L1=1U
+ X2D=1u X3D=1u XM=1k RCORE=1Meg
+
+VISRC1   4 11 0V
+VISRC2   6 14 0V
+FCTRL1   10 2 VISRC1 {RATIO1}
+FCTRL2   13 2 VISRC2 {RATIO2}
+EVCVS1   3 11 10 2 {RATIO1}
+EVCVS2   5 14 13 2 {RATIO2}
+RRPRI    1 8 {RPRI}
+RR2D    9 10 {R2D}
+RR3D    12 13 {R3D}
+LL1   8 7 {L1}
+LX2D  7 9 {X2D}
+LX3D  7 12 {X3D}
+LXM   7 2 {XM}
+RRCORE 7 2 {RCORE}
+
+.ENDS NI3WTRANS
--- a/Devices/NI4WTRANS.ckt
+++ b/Devices/NI4WTRANS.ckt
@ -0,0 +1,54 @@
				@@ -0,0 +1,54 @@
+*Transformer Subcircuit Parameters
+*RATIO1 = Turns ratio= Secondary1/Primary
+*RATIO2 = Turns ratio= Secondary2/Primary
+*RATIO3 = Turns ratio= Secondary3/Primary
+*RPRI   = Primary DC resistance
+*R2D    = Secondary1 leakage resistance referred to the primary side
+*R3D    = Secondary2 leakage resistance referred to the primary side
+*R4D    = Secondary3 leakage resistance referred to the primary side
+*L1     = Primary Leakage inductance
+*XM     = Magnetizing Reactance
+*RCORE  = Core Loss Resistance
+*X2D   = Secondary1 Leakage Reactance referred to the primary side
+*X3D   = Secondary2 Leakage Reactance referred to the primary side
+*X4D   = Secondary3 Leakage Reactance referred to the primary side
+
+*Non-ideal 4-winding Transformer
+*jjt created 17/1/2001.
+*jjt 18/1/2002: deleted a comment line (of default values) which lacked the asterisk, changed the parameter comments
+*               to be consistent with the parameters to avoid possible confusion.
+*Connections:
+*                 Pri+
+*                 |   Pri-
+*                 |   |   Sec1+
+*                 |   |   |   Sec1-
+*                 |   |   |   |   Sec2+
+*                 |   |   |   |   |   Sec2-
+*                 |   |   |   |   |   |   Sec3+
+*                 |   |   |   |   |   |   |   Sec3-
+*                 |   |   |   |   |   |   |   |
+*                 |   |   |   |   |   |   |   |
+.SUBCKT NI4WTRANS 1   2   3   4   5   6   7   8   PARAMS: RATIO1=1 RATIO2=1 RATIO3=1 RPRI=0.1 R2D=0.1 R3D=0.1 R4D=0.1 L1=1U
+ X2D=1u X3D=1u X4D=1u XM=1k RCORE=1Meg
+
+VISRC1   4 13 0V
+VISRC2   6 16 0V
+VISRC3   8 19 0V 
+FCTRL1   12 2 VISRC1 {RATIO1}
+FCTRL2   15 2 VISRC2 {RATIO2}
+FCTRL3   18 2 VISRC3 {RATIO3}
+EVCVS1   3 13 12 2 {RATIO1}
+EVCVS2   5 16 15 2 {RATIO2}
+EVCVS3   7 19 18 2 {RATIO3}
+RRPRI    1 10 {RPRI}
+RR2D    11 12 {R2D}
+RR3D    14 15 {R3D}
+RR4D    17 18 {R4D}
+LL1   10 9 {L1}
+LX2D  9 11 {X2D}
+LX3D  9 14 {X3D}
+LX4D  9 17 {X4D}
+LXM   9 2 {XM}
+RRCORE 9 2 {RCORE}
+
+.ENDS NI4WTRANS
--- a/Devices/NJFET.mdl
+++ b/Devices/NJFET.mdl
@ -0,0 +1,3 @@
				@@ -0,0 +1,3 @@
+*Default N-Ch J-FET pkg:TO-92B 3,1,2
+*NJFET Pinout: 1=D, 2=G, 3=S
+.MODEL NJFET NJF()
--- a/Devices/NMESFET.mdl
+++ b/Devices/NMESFET.mdl
@ -0,0 +1,2 @@
				@@ -0,0 +1,2 @@
+*Default N-Channel MESFET
+.MODEL NMESFET NMF()
--- a/Devices/NMOS.mdl
+++ b/Devices/NMOS.mdl
@ -0,0 +1,3 @@
				@@ -0,0 +1,3 @@
+*Default N-Channel MOSFET
+*Pinout: D,G,S
+.MODEL NMOS NMOS()
--- a/Devices/NPN.mdl
+++ b/Devices/NPN.mdl
@ -0,0 +1,3 @@
				@@ -0,0 +1,3 @@
+*Default NPN BJT
+*NPN Trans Pinout: C,B,E
+.MODEL NPN NPN()
--- a/Devices/NPN1.ckt
+++ b/Devices/NPN1.ckt
@ -0,0 +1,7 @@
				@@ -0,0 +1,7 @@
+*Default NPN Darlington Transistor pkg:TO-92B 1,2,3
+*NPN Trans Pinout: C,B,E
+.SUBCKT NPN1 1 2 3
+Q1 1 2 4 QMOD .1
+Q2 1 4 3 QMOD
+.MODEL QMOD NPN ()
+.ENDS NPN1
--- a/Show More
+++ b/Show More