*1N5407 MCE 8/5/97
*Ref: International Rectifier Digest '94
*800V 3000mA 3us Si Diode pkg:DIODE0.4 1,2
.MODEL 1N5407 D (IS=4.26N RS=14M N=1.7 BV=800 IBV=132U
+ CJO=125P VJ=0.75 M=0.333 TT=4.32U)