*1N4007 MCE 8-16-95
*1000V 1A Si GenPurpose Diode pkg:DIODE0.4 1,2
.MODEL 1N4007 D(IS=2.55E-9 RS=0.042 N=1.75 TT=5.76E-6 CJO=1.85E-11 
+ VJ=0.75 M=0.333 BV=1000 IBV=9.86E-5 )